PAM XIAMEN offers LSAT Substrate.
LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 or (La,Sr)(Al,Ta)O3 is a kind of mature perovskite crystal with twin-free, LAST is well matched with high temperature superconductors and various oxide materials. In a large number of practical applications, last is expected to replace LaAlO3 and [...]
2019-05-07meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading
Published by:
Quanli Zhang ; Zhen Zhang ; Honghua [...]
2019-12-02meta-author
PAM-XIAMEN can provide etching silicon wafer in P type and N type, more specifications please see: https://www.powerwaywafer.com/silicon-wafer/etching-wafer.html. The etching of silicon wafers is divided into isotropy and anisotropy, shown as Fig. 1. Isotropy etching means that the etching rate of silicon in all directions is the same during the etching process, [...]
2022-07-01meta-author
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
PAM XIAMEN offers Stainless Steel Substrate ( Polycrystaline) .
Stainless Steel Substrate: 1″ Dia x 0.3 mm, as cold rolling
Substrate dimension: 25.4 diameter x 0.3 mm thickness, ( 1″ Dia. x0.3 mm)
Properties
Yield Strength:(N/mm2)≥205
Tensile strength :≥520
Elogation: (%)≥40
Density : 7.93 g·cm-3
Resistivity: 0.73 Ω·mm2·m-1 [...]
2019-04-19meta-author
Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, [...]
2022-09-16meta-author