PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1
Item4, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ± 25μm
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]
We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial [...]
PAM XIAMEN offers 3″CZ Prime Silicon Wafer Item3, 50pcs Silicon wafer: i. Diameter: 76.2 mm ± 0.5 mm, ii. Thickness: 375μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ [...]
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
PAM XIAMEN offers 6″ CZ Silicon Wafer N Type/Arsenic doped Orientation (100) Thickness 625±15μm Resistivity 0.002-0.004Ωcm Flat one 47.5 ± 2.5, <110> ±1° TTV≤10μm TIR ≤5μm STIR≤2μm (15mm*15mm) Bow/Warp≤30μm Front Side: Chemical Mechanical Polished Back side: BSD Yes Poly(Å) No Oxide Back Seal(Å)5000±500 Å Edge Oxide Strip(mm):0.8 Back side Laser Mark: No Particle ≤10 @≥0.3㎛ METAL IMPURITIES: ≤ 2.5E10(Fe Cr Cu Ni)at/㎠ ≤ 5E10(Al Zn [...]
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
