PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
7-11
SEMI Prime
n-type Si:P
[100]
4″
224
P/E
5-10
SEMI Flats (two), Cassette of 12 + 13 wafers
n-type Si:P
[100]
4″
224
BROKEN
5-10
SEMI Test
n-type Si:P
[100]
4″
500
P/P
4-6
SEMI Prime
n-type Si:P
[100]
4″
350 ±10
P/P
3-5
SEMI Prime
n-type Si:P
[100]
4″
350
P/P
3-5
SEMI Test, Haze, pits, scratches
n-type Si:P
[100]
4″
450
C/C
3-5
SEMI Prime
n-type Si:P
[100]
4″
525
P/P
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
500 ±10
P/P
2-5
SEMI TEST (wafers have spots resembling water splashes, [...]
2019-03-05meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
600 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
340 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
>200
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
50
n- Si:P
36±4
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
5.4±0.7
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
66 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
78
n- Si:P
25 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/EOx
78
n- Si:P
20 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
17.5 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
60±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
70±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
22.5
p- Si:B
15±10%
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
6±0.9
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
38
p- [...]
2019-03-08meta-author
MESFET (Metal-Semiconductor Field Effect Transistor) is a field-effect transistor composed of Schottky barrier gates. SiC microwave MESFET was developed between 1995 and 2002 to replace GaAs microwave field effect transistors (FETs). There are three types of substrate materials used conductive substrate (n+- SiC), high-purity semi insulating substrate [...]
2023-11-24meta-author
PAM XIAMEN offers 3″ Silicon Wafer-17 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, per SEMI Prime,
P/P 4″Ø×300±25µm,
p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm,
TTV<10µm, Bow<40µm, Warp<40µm,
Both-sides-polished, SEMI Flats (two),
Primary Flat length 32.5±2.5mm, orientation 110±1°。
Secondary Flat length 18±2mm, orientation 90°±5°
Sealed in Empak cassette
For [...]
2019-11-26meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4″ Si substrate wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um
Back [...]
2019-07-05meta-author
PAM XIAMEN offers GaN LED epiwafer, which is grown on a patterned sapphire substrate (Al2O3) heated to an appropriate temperature, the gaseous substance InGaAIP is transported to the surface of the substrate in a controlled manner, and a specific single crystal film is grown. At [...]
2019-03-15meta-author