PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1
Item4, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ± 25μm
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Single crystal KTN (KTaNbO3) PAM XIAMEN offers Single crystal KTN. Single crystal KTN ( KTa 1-X NbXO3 ) is transparent isotropic crystal with very large electro-optic coefficients of about >600 pm/V, which is 20 times larger than that of conventional LiNbO3. KTN (100) 5x5x0.5mm, [...]
PAM-XIAMEN produce now include a-plane and m-plane single crystal GaN substrate as well as SiC crystal of various polytypes.
PAM XIAMEN offers 50.8mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1947 P/B [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat PAM1948 N/Ph [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat PAM1949 P/B [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1950 N/Ph [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1951 P/B [100] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with Flat PAM1952 P/B [111] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1953 P/B [111] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with [...]
The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks This paper studies the effect of anisotropy on the response of an R -plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the [...]
PAM XIAMEN offers Stainless Steel Substrate ( Polycrystaline) . Stainless Steel Substrate: 1″ Dia x 0.3 mm, as cold rolling Substrate dimension: 25.4 diameter x 0.3 mm thickness, ( 1″ Dia. x0.3 mm) Properties Yield Strength:（N/mm2）≥205 Tensile strength :≥520 Elogation: （%）≥40 Density : 7.93 g·cm-3 Resistivity: 0.73 Ω·mm2·m-1 [...]
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron [...]
