PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1
Item4, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ± 25μm
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]
Abstract A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8 Item5, 125pcs Silicon wafer: i. Diameter:100 mm ± 0.5 mm, ii. Thickness: 525μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: [...]
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]
Single-emitter LD Chip 808nm @10W PAM200914-LD-CHIP-808nm Brand: PAM-XIAMEN Wavelength: 808nm Stripe width: 190um Output Power: 10W Cavity Length:4mm Operation Symbol Min. Typ. Max. Unit Center wavelength λ — 808 — nm Output powe P。 — 10.5 — w Operation mode — — CW — — Geometrical Emitter width w — 190 — μm Cavity length L — 4000 — μm Chip width W — 500 — μm Chip height H — 150 — μm Electro Optical Data Threshold curen Ith — 1.6 — A Operating current Iop — 10 — A Operating voltage Vop — 1.8 — V Slope efficiency ηd=PJ(lop-Ith) — 1.2 — WIA Total conversion efficiency η=Po/(lopxVop) — 58 — % Slow axis divergence θn” — 10 — degrees Fast axis divergence θ1 — 35 — degrees Spectral width △λ — 3 — nm Polarization — — TE — — For more information, please contact us email [...]
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide 2″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2841 Intrinsic Si:- [100] 4″ 300 P/E FZ 16,000-20,000 SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect PAM2842 Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, [...]
