PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13
4″ CZ wafer, P type
Orientation: (100)±0.5
Type/Dopant; P/Boron
Resistivity: 1-5 Ω-cm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
Diameter: 100 mm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
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MgO single crystal substrate-1 PAM XIAMEN offers MgO single crystal substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in [...]
PAM XIAMEN offers YSZ ( Yittrium stablized ZrO2). 3.5 mol.% YSZ Ceramic Substrate 10x10x0.5 mm , fine ground on both sides 3.5% YSZ Ceramic Substrate 10x10x0.5 mm, two sides polished 3.5mol.% YSZ Ceramic Substrate 10x10x0.5 mm , one side polished 8% YSZ Ceramic Substrate [...]
PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates. Main Parameters Crystal structure face centered cubic, M3 a = 6.291 Å Growth method crystallization process Density 1.98（g/cm3） Melting point 770 °C Refractive index 1.49025 (at 589 nm) T 0.91 Nf 0.01114 Surface roughness <10 nm due to hygroscopic [...]
PAM XIAMEN offers 650nm laser diode wafers. 650nm LD structures P+ GaAs P>5E19, d=0.15μm P- AlGaInP and undoped AlGaInP d~1.5μm Undoped GaInP QW PL:640+-5nm Undoped AlGaInP and N- AlGaInP , d~2.2μm N GaAs substrate N=(0.4~4)×10^18 d=350~625μm (100) 10°off <111>A For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
PAM XIAMEN offers (112) Orientation Silicon Wafers. If you don’t see what you need then please email us your specs. Item Type/Dopant Ori Dia (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM3026 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips PAM3027 n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
