PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13
4″ CZ wafer, P type
Orientation: (100)±0.5
Type/Dopant; P/Boron
Resistivity: 1-5 Ω-cm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
Diameter: 100 mm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″Silicon Ignot. Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm), FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats. Lifetime>1,000us, Ox/Carbon <1E16/cc. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found [...]
Highlights •GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays. •Transmission electron microscopy images revealed arrays of 90° misfit dislocations. •Threading dislocation densities of around View the MathML source were found in each case. •Lower dark currents and higher quantum efficiency was found [...]
Deep level defects in p-type GaAs1−x Bi x (x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 [...]
PAM XIAMEN offers LaAlO3 single crystal. LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
PAM-XIAMEN, one of leading nanofabrication companies, has formed a compatible management system of multi-material, multi-user, multi-device, multi-process after years of exploration. The details as follows: * Multi-Material We can process multiple materials: Si, III-V semiconductor, glass, ceramic; – Can process wafers of 6 inches and below, compatible [...]
PAM XIAMEN offers LSAT Crystal Substrates. SPECIFICATIONS: Growth method: Czochralski method Crystal structure: Cubic Lattice parameter: a = 3.868 A Melt point (℃): 1840 Density: 6.74（g/cm3） Hardness: 6.5（mohs） Dielectric constants: 22 Thermal expansion: 10 x 10-6 /K Available Size: 10×3，10×5，10×10，15×15，20×15，20×20，Ф15, Ф20，Ф1″ (1 inch)，Ф2″ (2 inch), Ф2.6″ (2.6 inch). Special sizes and orientations are available upon request. Thickness: 0.5mm, 1.0mm Polishing: Single or double, Epi-face Ra < 0.5 [...]
