Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs Epi wafer and other related products and services announced the new availability of size 2″-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, [...]
2017-06-29meta-author
The structures of InxGa1-xAsyP1-y (indium gallium arsenide phosphide) quantum well epitaxially grown on InP substrate can be purchased or customized from PAM-XIAMEN. By adjusting the composition of x and y, the coverage wavelength range is from 870nm (GaAs) to 3.5um (InAs), which includes the optical [...]
2021-10-25meta-author
Porous Silicon Wafer
PAM XIAMEN offers Porous Silicon Wafer.
The novel uses of porous silicon include powering sattelites and perhaps even space ships!
In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]
2019-02-15meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
PAM XIAMEN offers 6″ silicon ignot.
Silicon ingot, per SEMI,
G 150.7±0.3mmØ,
FZ p-type Si:B[100]±2.0°, Ro=(600-900)Ohmcm, RRV<8%,
Ground Ingot, NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1000µs,
CofC inlude Resisistiviy (9points) and MC Lifetime measurement data, RRV calculations.
For more information, please visit our website: [...]
2019-07-02meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author