PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13
4″ CZ wafer, P type
Orientation: (100)±0.5
Type/Dopant; P/Boron
Resistivity: 1-5 Ω-cm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
Diameter: 100 mm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Magnesium ( Mg ) Single Crystal Substrate. Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut Magnesium ( Mg) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP Magnesium ( [...]
GaAs mHEMT epi wafer We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structure: N+ In0.53Ga0.47As 20nm (n=1×10^19 cm^-3) N+ InP etch stopper 5nm (n=5×10^18 cm^-3) i- In0.52Al0.48As Schottky barrier 10nm Si-delta-doping (n=6×10^12 cm^-2) i- In0.52Al0.48As spacer 4nm i-In0.53Ga0.47As channel 15nm In0.52Al0.48As buffer 300nm metamorphic buffer 300nm (linearly graded from [...]
Highlights •AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation. •The depletion region of structure is amended using a multiple recessed gate. •A gate structure is proposed to be able to control the thickness of the channel. •RF parameters are considered and are improved. In this [...]
Highlights •A recessed structure was used on the GaAs/Si solar cells to reduce the current path. •The associated series resistance was reduced by a recessed structure. •The carrier recombination loss was improved due to pyramid-like recessed structure. In this study, epitaxial layers of GaAs-based solar cells were grown [...]
Silicon dioxide wafer can be offered by PAM-XIAMEN, which is single / double side polished and one-sided / double-sided oxidation in various sizes. In the integrated circuit process, oxidation is an indispensable process technology. Since early people discovered that the diffusion rate of impurity [...]
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