4″FZ Prime Silicon Wafer-9

PAM XIAMEN offers 4″FZ Prime Silicon Wafer-9

4″ Silicon Wafer
Orientation (100)
Thickness 525±25μm
SSP
P type, Boron doped
Resistivity>200Ωcm
Roughness<8 Angstrom

For more information, send us email at [email protected] and [email protected]

2020-06-11

Studies on Silicon Carbide Epitaxial Technology

With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers. SiC usually adopts the PVT method with [...]

2021-02-25meta-author

Structure for InGaAs photodetectors

Structure for InGaAs photodetectors We offer the wafer structure InGaAs photodetectors as follows: Material X Thickness (nm) Dopant Doping concentration InP 1000 N (Sulfur) 3e16 In(x)GaAs 0.53 3000 U/D 5e14 InP 500 N (Sulfur) 3e16 Substrate SI (Fe) Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected]

2015-02-02meta-author ingaas apd, ingaas detector, ingaas lattice, ingaas photodiode

4″ Prime Silicon Wafer Thickness 675 +/- 20 microns

PAM XIAMEN offers 4″ Prime Silicon Wafer Thickness 675 +/- 20 microns. Wafers 4 inches in a diameter of monocrystalline silicon with an insulating oxide. 100 mm in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for [...]

2019-07-02meta-author

Ceramic Substrate-10

PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass). BK7 Glass BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40) BK7 (Schott) glass [...]

2019-04-18meta-author

GaN on Sapphire for RF

PAM XIAMEN offers GaN on Sapphire for RF. 1.1 GaN HEMT Structure on Sapphire for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM / XRD(002)FWHM / Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion <2mm siN passivation layer 0~30nm u-GaN cap layer / Al composition 20-30% In composition 17% for InAlN AlGaN barrier layer 20~30nm AlN [...]

2019-05-17meta-author

Nickel Substrate & Foil-1

PAM XIAMEN offers Nickel Single crystal. tomic number: 28 Atomic number: 28 Atomic mass: 58.71 g.mol -1 Atomic mass: 58.71 g.mol -1 Crystal structure: F.C.C Crystal structure: F.C.C Lattice Constant: 0.325 nm Lattice Constant: 0.325 nm Ni Single crystal Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished Ni Single Crystal Substrate, <100>, 10×10 x [...]

2019-05-13meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

4″FZ Prime Silicon Wafer-9

4″FZ Prime Silicon Wafer-9

PAM XIAMEN offers 4″FZ Prime Silicon Wafer-9

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