4″ Silicon Wafer
Orientation (100)
Thickness 525±25μm
SSP
P type, Boron doped
Resistivity>200Ωcm
Roughness<8 Angstrom
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 6″ FZ Silicon Wafer-7 GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, One SEMI Flat Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Transmitance-GaN material-TEST REPORT A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
SiC(Silicon Carbide) Boule Crystal PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size: No.1: 4″ SiC Boule Crystal, Production Grade Polytype: Production- 4H Diameter: Production-100,0 mm+/-0,2 [...]
By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction. Field effect transistor Type Name Principle FET JFET Junction PN junction MOSFET Metal oxide semiconductor MESFET Metal semiconductor Schottky junction MODFET Modulation doping HEMT High electron mobility In fact, a Schottky junction can be realized through another structure. Definitions of Junctions Starting from [...]
Multi-pixel Spectral Imaging Module PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γcamera and SPECT. Direct splice: The [...]
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer Item Parameter Spec Unit 1 Growth Method CZ 2 Diameter 100+/-0.5 mm 3 Type-Dopant P- Boron 4 Resistivity 0.002 – 0.003 ohm-cm 5 Resistivity Radial Variation <10 % 6 Crystal Orientation <111> 4 +/- 0.5 degree 7 Primary Flat Orientation Semi degree Length Semi mm 8 Secondary Flat Orientation Semi degree Length semi mm 9 Thickness 525 +/- 25 μm 10 TTV ≦10 μm 11 Bow ≦40 μm 12 Warp ≦40 μm 13 Front Surface polished 14 Backside etched — 5000 +/-10% Angstoms SiO2 15 Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination — 16 Edge Profile Edge Rounding 17 Particle (>0.3μm) N/A ea/wf 18 — — — 19 Epi Layer 1 N Phos — 20 Resistivity 3.8 – 5.2 ohm cm 21 Thickness 29.0 – 35.0 um — — — 22 Epi Layer [...]
