4″ Silicon Wafer
Orientation (100)
Thickness 525±25μm
SSP
P type, Boron doped
Resistivity>200Ωcm
Roughness<8 Angstrom
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers InP Wafer. Detailed wafer information, please refer to below: 1. InP Wafer Specifications InP(100) InP (100) Sn-doped InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp InP (100)undoped InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp VGF InP (100) undoped, 2″ x 0.35 [...]
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping 4″ CZ crystal Si wafer N type doped P Orientation<111> Resistivity 12-15Ωcm Thickness 205-220μm Prime Flat32.5±2.5mm no need for DSP, just double side lapping For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
Single-emitter LD Chip 808nm @10W PAM200914-LD-CHIP-808nm Brand: PAM-XIAMEN Wavelength: 808nm Stripe width: 190um Output Power: 10W Cavity Length:4mm Operation Symbol Min. Typ. Max. Unit Center wavelength λ — 808 — nm Output powe P。 — 10.5 — w Operation mode — — CW — — Geometrical Emitter width w — 190 — μm Cavity length L — 4000 — μm Chip width W — 500 — μm Chip height H — 150 — μm Electro Optical Data Threshold curen Ith — 1.6 — A Operating current Iop — 10 — A Operating voltage Vop — 1.8 — V Slope efficiency ηd=PJ(lop-Ith) — 1.2 — WIA Total conversion efficiency η=Po/(lopxVop) — 58 — % Slow axis divergence θn” — 10 — degrees Fast axis divergence θ1 — 35 — degrees Spectral width △λ — 3 — nm Polarization — — TE — — For more information, please contact us email [...]
Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 250 P/P 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 2″ 300 P/E 0.01-0.02 SEMI, p-type Si:B [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, p-type Si:B [100] 2″ 600 P/E 0.01-0.05 SEMI Prime, p-type Si:B [100] 2″ 525 P/E 0.005-0.020 SEMI Prime, , TTV<5μm p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ P/E SEMI Prime p-type Si:B [100] 2″ 525 P/P <0.01 {0.0076-0.0078} SEMI Prime, , in hard cassettes of 5 wafers. p-type Si:B [111] ±0.5° 2″ 275 P/E 1-30 SEMI Prime p-type Si:B [111] ±0.5° 2″ 330 P/E 1-20 SEMI Prime p-type Si:B [111] ±0.5° 2″ 330 P/E 1-20 SEMI Prime p-type [...]
What is GaAs? GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs). GaAs Basic Parameters at 300K Crystal structure Zinc Blende Group of [...]
