4″ Silicon Wafer
Orientation (100)
Thickness 525±25μm
SSP
P type, Boron doped
Resistivity>200Ωcm
Roughness<8 Angstrom
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Single-emitter LD Chip 905nm @25W. Brand: PAM-XIAMEN Wavelength: 905nm Stripe width: 84um Output Power: 25W Cavity Length:0.75mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
(10-11) Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers MgO single crystal substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
Silicon Ingots -1 PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs! All diameters! Note: Material – CZ unless noted Kg in Properties of Silicon Stock Silicon Ingots Material Description 2.7 FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats 1.15 FZ 6″Ø×25mm [...]
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
According to data published by WSTSabout worldwide semiconductor market, all product categories and regions are forecasted to grow steadily but moderately in the next two years, under the assumption of a further macro economy recovery throughout the entire forecast period and maturing historically strong [...]
