PAM XIAMEN offers InP Wafer. Detailed wafer information, please refer to below:
1. InP Wafer Specifications
InP(100)
InP (100) Sn-doped
InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp
InP (100)undoped
InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 [...]
2019-05-06meta-author
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping
4″ CZ crystal Si wafer
N type doped P
Orientation<111>
Resistivity 12-15Ωcm
Thickness 205-220μm
Prime Flat32.5±2.5mm
no need for DSP, just double side lapping
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author
Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
Operation
Symbol
Min.
Typ.
Max.
Unit
Center wavelength
λ
—
808
—
nm
Output powe
P。
—
10.5
—
w
Operation mode
—
—
CW
—
—
Geometrical
Emitter width
w
—
190
—
μm
Cavity length
L
—
4000
—
μm
Chip width
W
—
500
—
μm
Chip height
H
—
150
—
μm
Electro Optical Data
Threshold curen
Ith
—
1.6
—
A
Operating current
Iop
—
10
—
A
Operating voltage
Vop
—
1.8
—
V
Slope efficiency
ηd=PJ(lop-Ith)
—
1.2
—
WIA
Total conversion efficiency
η=Po/(lopxVop)
—
58
—
%
Slow axis divergence
θn”
—
10
—
degrees
Fast axis divergence
θ1
—
35
—
degrees
Spectral width
△λ
—
3
—
nm
Polarization
—
—
TE
—
—
For more information, please contact us email [...]
2019-05-09meta-author
Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
2019-03-12meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
250
P/P
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.01-0.02
SEMI,
p-type Si:B
[100]
2″
500
P/P
0.01-0.02
SEMI Prime,
p-type Si:B
[100]
2″
600
P/E
0.01-0.05
SEMI Prime,
p-type Si:B
[100]
2″
525
P/E
0.005-0.020
SEMI Prime, , TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
P/E
SEMI Prime
p-type Si:B
[100]
2″
525
P/P
<0.01 {0.0076-0.0078}
SEMI Prime, , in hard cassettes of 5 wafers.
p-type Si:B
[111] ±0.5°
2″
275
P/E
1-30
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type [...]
2019-03-07meta-author
What is GaAs?
GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).
GaAs Basic Parameters at 300K
Crystal structure
Zinc Blende
Group of [...]
2012-05-14meta-author