6″FZ Prime Silicon Wafer-2

6″FZ Prime Silicon Wafer-2

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2

6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm

 PARAMETERSPECIFICATION
GENERAL CHARACTERISTICS
       1        Growth MethodFZ Gas Dope
       2   Crystal Orientation(111)
       3   Conductivity Typen
       4   DopantPhosphorus.
       5   Nominal Edge Exclusion6 mm
ELECTRICAL CHARACTERISTICS
       6   Resistivity5000 – 10,000 Wcm
       7   Life Time>1500 µsec
CHEMICAL CHARACTERISTICS
       8   Oxygen Concentrations< 2xE16 at/cm3
       9   Carbon Concentrations< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
      10  Front Surface ConditionPolished, DSP
      11  Edge Surface Condition Not specified
DIMENSIONAL CHARACTERISTICS
      12  Diameter150 ± 0.2 mm
      13  Primary Flat Length57.5±2.5 mm
      14  Primary Flat Orientation{110} ± 1°
      15  Secondary Flat LengthNone
      16  Edge Profile According to SEMI M1 Standard
      17  Thickness, Center Point320±15 µm
      18  Total Thickness Variation, Max10µm
      19  Bow, Max40µm
      20  Warp,  Max40µm

 

For more information, send us email at [email protected] and [email protected]

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