PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
4″ Si wafer, R>20,000Ωcm
Silicon, Si wafers
orientation (100)
dimensions 100 mm x 525µm (+/-25µm) thick.
FZ >20 000 ohm.cm
Ra<0.5 nm
One side polished
Ra<0.5nm (µelectronic grade)
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-05meta-author
PAM XIAMEN offers 3″ Prime EPI Wafer.
Details of Prime 3″ Silicon Wafer Specification
CZ SUBSTRATE:
Orientation : 111
OFF orientation : 3° – 4°
Type/Dopant : n/Sb
Resistivity Ω cm : <0.018
Diameter mm : 76.2 +/- 0.5
Flats : SEMI
Flat, location [...]
2019-07-03meta-author
PAM XIAMEN offers 4″ Diameter Wafer.
4″ Diameter Wafer
Ge N-type 4” ,undoped
Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( un- doped)
Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 1SP
Ge Wafer (100) . Undoped, 4″ [...]
2019-04-25meta-author
Highlights
•The validity of comparing DC and RF HTOL test results is a key issue in reliability testing.
•We investigate whether DC and RF self heating, and therefore channel temperature, are equivalent.
•For this purpose, an experimentally validated electrothermal model has been developed.
•Channel temperature is found to [...]
Product Specifications
PAM XIAMEN offers Freestanding GaN Substrate
2″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
2″(50.8)+/-1mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
16+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
8+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation Density
<5×10^6cm-2
Marco Defect Density
A grade<=2cm-2 B grade>2cm-2
TTV
<=15um
BOW
<=20um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %
Usable Area
1.5″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
1.5″(38.1)+/-0.5mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
12+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
6+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation [...]
2019-03-15meta-author
PAM XIAMEN offers 8″ Silicon Wafer
8″ Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Chamfer width 700-1000 μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-09-03meta-author