PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher [...]
2020-11-24meta-author
PAM XIAMEN offers Nd2Ga5O12 single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
(Cubic)
GGG
Gd3Ga5O12
YSGG
Y3Sc2Ga3O5
S-GGG(CaMgZr:GGG)
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
NGG
Nd3Ga5O12
GYSGG
Gd0.63Y2.37Sc2Ga3O12
GSGG
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 [...]
2019-05-14meta-author
PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).
Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished
Zr – Polycrystalline Metallic Foil: 0.08mm thick x 200mm Width x 400 mm Length
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-10meta-author
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm
4inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 101.6mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished.
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM-XIAMEN, a leading germanium ingot manufacturer, has germanium (Ge) crystals for sale. Due to its scarcity of resources, excellent optical and physical properties, germanium material is widely used in high-tech fields such as fiber optic systems, infrared optical systems, electronics and solar applications, detectors, [...]
2021-07-01meta-author
PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17meta-author