6″FZ Prime Silicon Wafer-2

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2

6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm

	PARAMETER	SPECIFICATION
GENERAL CHARACTERISTICS
1	Growth Method	FZ Gas Dope
2	Crystal Orientation	(111)
3	Conductivity Type	n
4	Dopant	Phosphorus.
5	Nominal Edge Exclusion	6 mm
ELECTRICAL CHARACTERISTICS
6	Resistivity	5000 – 10,000 Wcm
7	Life Time	>1500 µsec
CHEMICAL CHARACTERISTICS
8	Oxygen Concentrations	< 2xE16 at/cm3
9	Carbon Concentrations	< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10	Front Surface Condition	Polished, DSP
11	Edge Surface Condition	Not specified
DIMENSIONAL CHARACTERISTICS
12	Diameter	150 ± 0.2 mm
13	Primary Flat Length	57.5±2.5 mm
14	Primary Flat Orientation	{110} ± 1°
15	Secondary Flat Length	None
16	Edge Profile	According to SEMI M1 Standard
17	Thickness, Center Point	320±15 µm
18	Total Thickness Variation, Max	10µm
19	Bow, Max	40µm
20	Warp, Max	40µm

For more information, send us email at [email protected] and [email protected]

2020-04-17

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