6″FZ Prime Silicon Wafer-2

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2

6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm

  PARAMETER SPECIFICATION
GENERAL CHARACTERISTICS
       1         Growth Method FZ Gas Dope
       2    Crystal Orientation (111)
       3    Conductivity Type n
       4    Dopant Phosphorus.
       5    Nominal Edge Exclusion 6 mm
ELECTRICAL CHARACTERISTICS
       6    Resistivity 5000 – 10,000 Wcm
       7    Life Time >1500 µsec
CHEMICAL CHARACTERISTICS
       8    Oxygen Concentrations < 2xE16 at/cm3
       9    Carbon Concentrations < 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
      10   Front Surface Condition Polished, DSP
      11   Edge Surface Condition  Not specified
DIMENSIONAL CHARACTERISTICS
      12   Diameter 150 ± 0.2 mm
      13   Primary Flat Length 57.5±2.5 mm
      14   Primary Flat Orientation {110} ± 1°
      15   Secondary Flat Length None
      16   Edge Profile  According to SEMI M1 Standard
      17   Thickness, Center Point 320±15 µm
      18   Total Thickness Variation, Max 10µm
      19   Bow, Max 40µm
      20   Warp,  Max 40µm

 

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

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