5-7-2 Further Recommended Reading
5-7-2 Further Recommended Reading
5-6-4-1 SiC High-Power Rectifiers The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
1-2.Stacking Sequence If we are going to make a laminated structure, we must know the thickness of each ply and the angle of each ply traditionally in degrees defined from the top layer down.
2-32.Semi-insulating Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
5-6-4-1-2 Bipolar and Hybrid Power Rectifiers For higher voltage applications, bipolar minority carrier charge injection (i.e., conductivity modulation) should enable SiC pn diodes to carry higher current densities than unipolar Schottky diodes whose drift regions conduct solely using dopant-atom majority carriers . Consistent with silicon [...]
5-6 SiC Electronic Devices and Circuits This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2-23.Micropipe density A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]