5-7-2 Further Recommended Reading

Related Posts

5-4-4-1 SiC Epitaxial Growth Processes

5-4-4-1 SiC Epitaxial Growth Processes An interesting variety of SiC epitaxial growth methodologies, ranging from liquid-phase epitaxy, molecular beam epitaxy, and chemical vapor deposition(CVD) have been investigated . The CVD growth technique is generally accepted as the most promising method for attaining epilayer reproducibility, quality, [...]

2018-06-28meta-author
5-6-1 SiC Optoelectronic Devices

5-6-1 SiC Optoelectronic Devices The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics. 6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]

2018-06-28meta-author
5-5-3 SiC Contacts and Interconnect

5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable [...]

2018-06-28meta-author
2-17.Polytypes

2-17.Polytypes Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006,with some of them having a lattice constant as [...]

2018-06-28meta-author
2-30.Dopant

2-30.Dopant A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the opticalproperties of the substance. In the case of crystalline substances, the atoms of [...]

2018-06-28meta-author
5-6-4-1-1 SiC Schottky Power Rectifiers.

5-6-4-1-1 SiC Schottky Power Rectifiers. 4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]

2018-06-28meta-author