5-7-2 Further Recommended Reading
5-7-2 Further Recommended Reading
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SiC Epilayers
Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]
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2-5.Misorientation
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5-6-3 SiC High-Temperature Signal-Level Devices
Most analog signal conditioning and digital logic circuits are considered “signal level” in that individual transistors in these circuits do not typically require any more than a few milliamperes of current and <20 V to function properly. Commercially available silicon-on-insulator circuits can perform complex digital and [...]
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5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates
5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
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5-5-5 SiC Insulators: Thermal Oxides and MOS Technology
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2018-06-28meta-author
1-5.Thermal Expansion Coefficient
1-5.Thermal Expansion Coefficient Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
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