PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1
6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm
| PARAMETER | SPECIFICATION | |
| GENERAL CHARACTERISTICS | ||
| 1 | Growth Method | FZ Gas Dope |
| 2 | Crystal Orientation | (100) |
| 3 | Conductivity Type | n |
| 4 | Dopant | Phosphorus |
| 5 | Nominal Edge Exclusion | 6 mm |
| ELECTRICAL CHARACTERISTICS | ||
| 6 | Resistivity | 2000 – 7000 Ωcm |
| 7 | Life Time | >1500 µsec |
| CHEMICAL CHARACTERISTICS | ||
| 8 | Oxygen Concentrations | < 2xE16 at/cm3 |
| 9 | Carbon Concentrations | < 2xE16 at/cm3 |
| WAFER PREPARATION CHARACTERISTICS | ||
| 10 | Front Surface Condition | Polished, SSP |
| 11 | Edge Surface Condition | Not specified |
| DIMENSIONAL CHARACTERISTICS | ||
| 12 | Diameter | 150 ± 0.2 mm |
| 13 | Primary Flat Length | 57.5±2.5 mm |
| 14 | Primary Flat Orientation | {110} ± 1° |
| 15 | Secondary Flat Length | None |
| 16 | Edge Profile | According to SEMI M1 Standard |
| 17 | Thickness, Center Point | 320±15 µm |
| 18 | Total Thickness Variation, Max | 10µm |
| 19 | Bow, Max | 40µm |
| 20 | Warp, Max | 40µm |
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com