6″FZ Prime Silicon Wafer-1

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1

6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm

  PARAMETER SPECIFICATION
GENERAL CHARACTERISTICS
       1         Growth Method FZ Gas Dope
       2    Crystal Orientation (100)
       3    Conductivity Type n
       4    Dopant Phosphorus
       5    Nominal Edge Exclusion 6 mm
ELECTRICAL CHARACTERISTICS
       6    Resistivity 2000 – 7000 Ωcm
       7    Life Time >1500 µsec
CHEMICAL CHARACTERISTICS
       8    Oxygen Concentrations < 2xE16 at/cm3
       9    Carbon Concentrations < 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
      10   Front Surface Condition Polished, SSP
      11   Edge Surface Condition  Not specified
DIMENSIONAL CHARACTERISTICS
      12   Diameter 150 ± 0.2 mm
      13   Primary Flat Length 57.5±2.5 mm
      14   Primary Flat Orientation {110} ± 1°
      15   Secondary Flat Length None
      16   Edge Profile  According to SEMI M1 Standard
      17   Thickness, Center Point 320±15 µm
      18   Total Thickness Variation, Max  10µm
      19   Bow, Max 40µm
      20   Warp,  Max 40µm

 

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-04-17

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