3″ Silicon Wafer-2

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime
n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime
n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime
n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime
n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime
n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25-75 Prime
n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime
n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime
n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 SEMI TESt
n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000-12,000 SEMI Prime, Lifetime>1,500μs
n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000-12,000 Broken E/E wafers, in two pieces, Lifetime>1,500μs,
n-type Si:P [111] ±0.5° 3″ 2500 C/C FZ 7,000-13,000 SEMI, Individual cst
n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI Prime
n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI Tes, Scratches on polished side
n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 5,000-7,400 SEMI Prime, MCC Lifetime>1,500μs
n-type Si:P [111] ±0.5° 3″ 675 P/P FZ >5,000 SEMI Prime, TTV<4μm, Lifetime>800μs
n-type Si:P [111] ±0.5° 3″ 1000 P/E FZ >5,000 SEMI Prime
n-type Si:P [111] ±0.5° 3″ 380 P/E FZ 4,000-8,000 SEMI Prime, in hard cassettes of 1 & 2 wafers
n-type Si:P [111] ±0.5° 3″ 380 BROKEN FZ 4,000-8,000 Broken P/E wafer, Soft cst
n-type Si:P [111] ±0.5° 3″ 380 P/P FZ 3,000-5,000 SEMI Prime
n-type Si:P [111] ±0.5° 3″ 380 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>1,000μs,

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

2019-03-06

Share this post

Related Posts

6″ Silicon Ignot

PAM XIAMEN offers 6″ silicon ignot. Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ p-type Si:B[100]±2.0°, Ro=(600-900)Ohmcm, RRV<8%, Ground Ingot, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1000µs, CofC inlude Resisistiviy (9points) and MC Lifetime measurement data, RRV calculations. For more information, please visit our website: [...]

2019-07-02meta-author
6″FZ Prime Silicon Wafer-1

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1 6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm   PARAMETER SPECIFICATION GENERAL CHARACTERISTICS        1         Growth Method FZ Gas Dope        2    Crystal Orientation (100)        3    Conductivity Type n        4    Dopant Phosphorus        5    Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS        6    Resistivity 2000 – 7000 Ωcm        7    Life Time >1500 µsec CHEMICAL CHARACTERISTICS        8    Oxygen Concentrations < 2xE16 at/cm3        9    Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS       10   Front Surface Condition Polished, [...]

2020-04-17meta-author
2″ Silicon Wafer-10

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]

2019-03-07meta-author
Flipping 60 GHz transistors

InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW A TEAM of Taiwanese engineers has used flip-chip packaging to build anInGaAs HEMT delivering up to 6.5 dB of gain at 60 GHz. The researchers argue that one of the [...]

2012-09-10meta-author
Germanium Resistivity Measured by DC Linear Four-Point Probe – Criterion

The single crystal germanium is n type at room temperature, and the resistivity shows non-single dependence on temperature. When conduction type transits from n type to p type, the bulk germanium resistivity is in maximum, and the carrier mobility is declining. With the increasing [...]

2021-11-10meta-author
Measurement of threading dislocation densities in GaN by wet chemical etching

Measurement of threading dislocation densities in GaN by wet chemical etching We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid [...]

2013-05-16meta-author