PAM XIAMEN offers 8″CZ Prime Silicon Wafer-2
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at [email protected] and [email protected]
8″CZ Prime Silicon Wafer-2
Related Posts
(100) Oriented Silicon Wafers-2
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2841 Intrinsic Si:- [100] 4″ 300 P/E FZ 16,000-20,000 SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect PAM2842 Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, [...]
2019-02-22meta-author
Thermal Oxide Wafers, 2 – 4″ Research Grade-4
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PbSe single crystal substrate
PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
2019-05-14meta-author
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN [...]
2013-09-13meta-author
GaN layer
AlN Single Crystal Substrate& Template
High transparency AlN template on sapphire and silicon substrate are available from PAM-XIAMEN, which are suitable for making high-frequency BAW, SAW devices and power electronic. Aluminum nitride (AIN) template not only has the characteristics of AIN piezoelectric film, but also has the characteristics of higher sound propagation rate, [...]
2019-04-26meta-author
GaN Wafers to Fabricate LED Devices
PAM-XIAMEN, one of LED wafer manufacturers, offers GaN Wafer for Fabricating LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission: 1. Specification of GaN Wafer for LED Devices No1. PAM200614-GAN-LED size : 2 inch WD : 455 ± 10nm [...]
2020-06-02meta-author