PAM XIAMEN offers 8″CZ Prime Silicon Wafer-2
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at [email protected] and [email protected]
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline). General Properties for Molybdenum Symbol Mo Atomic Number 42 Atomic Weight: 95.96 g/mol Crystal structure: BCC Lattice constant at room temperature : 0.315 nm Density: 10.28 g/cm3 Melting Point: 2623 °C Boiling Point: 4639 °C Mo Polycrystalline Substrate: [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations Published by: Shakil Khan ; Ishaq Ahmad ; M. Hassan Raza ; Khizar-ul-Haq ; Ting-kai Zhao ; Fabian I. Ezema. 1.Department of Metallurgy and Materials EngineeringPakistan Institute [...]
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2 6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (111) 3 Conductivity Type n 4 Dopant Phosphorus. 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 5000 – 10,000 Wcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, DSP 11 Edge [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals Published by: Irina Volotsenko ; Michel Molotskii ; Anna Borovikova ; Nathan [...]
PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]