PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
-10 µm ≤ BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
(LT-GaAs)Experimental Results
PAM XIAMEN offers Low Temperature GaAs.
Preparation for pump & probe measurement
Reflectance spectra measurement : we could not observe the reflectance peak.
PL spectra measurement : PL spectra were observed between 810 and 845 nm.
Pump & probe measurement (10 K)
・We have observed 0.6-1.6 picosecond decay [...]
2019-03-15meta-author
Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW).
To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]
2017-07-04meta-author
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-111
.001-.005
300-350
P/E
PRIME
50.8
P
Boron
CZ
-110
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-110
1-20
250-300
P/E
PRIME
50.8
Any
Any
CZ
Any
Any
200-500
P/E
TEST
50.8
Any
Any
CZ
Any
Any
800-1000
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Intrinsic
Undoped
FZ
-100
5000-10000
275-325
P/E
PRIME
50.8
SI.
Undoped
VGF
-100
>1E7
325-375
P/E
PRIME
50.8
N
Si
VGF
4E+18
250-300
P/E
EPI
50.8
N
Si
VGF
-100
325-375
P/E
PRIME
50.8
P
Zn
VGF
-100
325-375
P/E
PRIME
50.8
Undoped
CZ
-100
>30
300-350
P/P
EPI
50.8
Undoped
CZ
-100
>30
350-400
P/E
EPI
50.8
N
Sb
CZ
(100)off 6-9 tow
.01-.04
150-200
P/E
EPI
50.8
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
50.8
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
50.8
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
50.8
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
50.8
R-Axis
CZ
300-350
P/E
TEST
50.8
N
Si
VGF
-100
275-325
P/E
PRIME
50.8
P
Zn
VGF
-100
275-325
P/E
PRIME
50.8
Si
Fe
VGF
-100
5000000
325-375
P/E
PRIME
50.8
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
50.8
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
2019-03-04meta-author
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping
4″ CZ crystal Si wafer
N type doped P
Orientation<111>
Resistivity 12-15Ωcm
Thickness 205-220μm
Prime Flat32.5±2.5mm
no need for DSP, just double side lapping
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author