

PAM XIAMEN offers ZnO thin film on Sapphire. ZnO Film (0.5 um) on Sapphire(0001), 10x10x0.5mm,1sp , undoped ZnO Film (0.5 um) on Sapphire(0001), 5x5x0.5mm ,1sp, undoped ZnO Film on Sapphire(0001), 2″x0.5mm, undoped , ZnO: 0.5 um For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal. Major capability parameter Material purity >99.995% Crystal structure M6 Unit cell constant a=5.154Å c=13.783 Å Melt point(℃) 1650 Density 7.45(g/cm3) Hardness 5.5~6(mohs) Color Colorless Index of refraction no=2.176 ne=2.180 (633nm) Through scope 0.4~5.0mm Resistance coefficient 1015wm Dielectric [...]
GaN Wafers to Fabricate LED Devices PAM-XIAMEN offers GaN Wafers to Fabricate LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission: Specification of GaN Wafers for LED Devices PAM200614-GAN-LED size : 2 inch WD : 455 ± [...]
PAM XIAMEN offers PbWO4 single crystal substrate. PbWO4 single crystal substrate ,random orientation, 5 x 3 x 0.45mm,Single side polished PbWO4 single crystal substrate ,random orientation, 5 x 5 x 0.45mm,Single side polished PbWO4 (001) single crystal substrate 10x10x0.5mm,2sp PbWO4 single crystal substrate , [...]
980 Single Mode Laser Chip (PAM200827-LD) PAM XIAMEN offers 980 Single Mode Laser Chip Powerwaywafer 980 Single mode laser chip property Minimum Typical Maximum Central Wavelength 969 974 979 nm 970 980 990 Output Power (mW) 300 400 500 Working Mode CW — — — Longitudinal mode Single — — — Spectrum Width — — — Emitter Width — — — Cavity Width (μm) 640 650 660 Cavity Length (μm) 4490 4500 4510 Cavity Thickness (μm) 115 125 135 Fast Axis Divergence(FWHM) 30 Deg — — — Slow Axis Divergence (FWHM) [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]