

PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer. ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm) Silicon Wafer Specifications: Film: ZnO/Pt/Ti thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp ZnO=150nm, ZnO film: c-axis, medium (001) orientation Pt/Ti film: [...]
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 6″ {150.0±0.3mm}Ø×625±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50 n- Si:P 36±4 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 5.4±0.7 N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 60±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 70±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5 p- Si:B 15±10% P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 6±0.9 P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38 p- [...]
PAM XIAMEN offers Single-emitter LD Chip 808nm @8W. Brand: PAM-XIAMEN Wavelength: 808nm Stripe width: 350um Output Power: 8W Cavity Length:2.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]
PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes (p-n junction SiC epi wafer) as follows: SiC-On-SiC Epi Wafer For Pin-Diodes 1. Specifications of SiC Epitaxy on Silicon Carbide Substrate pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3 p[Al]: [...]