

PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below: 1. N-Type Freestanding GaN Substrate Specification Item PAM-FS-GAN-50-N Dimension 10 x 10.5 mm2 Thickness 380+/-50um Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5x 106 cm-2 (calculated by CL)* Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in [...]
PAM XIAMEN offers 3″ Silicon Wafer-21 Si wafer Orientation: (111) ± 0.5° Type: p-type Dopant: B Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 2° to <11-2> Resistivity: < 0.002 Ohm*cm Single side polished C Boron > E20 atom/cm3 Oi < 1E18 atom/cm3 [...]
PAM XIAMEN offers 12 inch Si dummy wafer: Surface:double side polished; Thickness ≥750um; V Notch(SEMI STD); Slight scratch (with no stains or heavy/deep scratches); About the Si dummy wafer According to different application scenarios in the fab, silicon wafers can be divided into two categories: 1.Prime Wafer, which is directly used for [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 2″ 280 P/E/P 1-20 SEMI Prime p-type Si:B [111-1.5°] 2″ 400 P/E 1-10 SEMI Prime p-type Si:B [111] 2″ 500 P/E 1-10 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 280 P/E 0.5-0.6 SEMI Prime p-type Si:B [111-3°] 2″ 300 P/P 0.016-0.018 SEMI Prime p-type Si:B [111-3.5°] 2″ 280 P/P 0.01-0.02 SEMI Prime p-type Si:B [111] 2″ 600 P/E 0.01-0.05 SEMI Prime p-type Si:B [111-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] 2″ 1000 P/P ~4 NO Flats n-type Si:P [110] 2″ 950 P/P 2.5-3.5 1 F @ <1,-1,0> n-type Si:P [110] 2″ 450 P/P ~0.6 1 F @ <001> n-type Si:P [110] 2″ 1000 P/P 0.5-1.0 PF<111> SF 109.5° n-type Si:P [100] 2″ 500 P/P 800-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E >50 SEMI Prime, n-type Si:P [100] 2″ 5000 P/E 42-53 SEMI Prime, , Individual cst n-type [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual [...]
FZ Silicon Ignot Diameter 80+1mm-1 PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more [...]