A Plane N-GaN Freestanding GaN Substrate

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A Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate

Item PAM-FS-GAN A-N
Dimension 5 x 10 mm2 or 5 x 20 mm2
Thickness 380+/-50um
Orientation A plane (11-20) off angle toward M-axis 0 ±0.5°

A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Si Doped
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW -10 µm ≤ BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-17

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