A Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN A-N
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type	N-type / Si Doped
Resistivity (300K)	< 0.05 Ω·cm
TTV	≤ 10 µm
BOW	-10 µm ≤ BOW ≤ 10 µm
Surface Roughness:	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤ 5 x 10⁶ cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

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[email protected]waywafer.com [email protected]

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A Plane N-GaN Freestanding GaN Substrate

A Plane N-GaN Freestanding GaN Substrate

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