AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application of SAW / FBAR filters, optoelectronic devices, power devices and MEMS. AlScN, a III-V semiconductor based ferroelectric, is a promising semiconductor material at present, which [...]
2021-09-10meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (111)
BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
2019-04-17meta-author
PAM XIAMEN offers ZnO thin film on Sapphire.
ZnO Film (0.5 um) on Sapphire(0001), 10x10x0.5mm,1sp , undoped
ZnO Film (0.5 um) on Sapphire(0001), 5x5x0.5mm ,1sp, undoped
ZnO Film on Sapphire(0001), 2″x0.5mm, undoped , ZnO: 0.5 um
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-29meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author
We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then [...]
Yellow and Green Luminescence in a Freestanding GaN Template
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV [...]
2012-09-04meta-author