Total Thickness Variation (TTV): The maximum variation in the wafer thickness. Total Thickness Variation is generally determined by measuring the wafer in 5 locations of a cross pattern (not too close to the wafer edge) and calculating the maximum measured difference in thickness. The [...]
2018-06-28meta-author
5-2-1-2 Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in [...]
2018-06-28meta-author
3-3. Dimpling
A texture resembling the surface of a golf ball. Speci ed in % affected area.
2018-06-28meta-author
5-6-1 SiC Optoelectronic Devices
The wide bandgap of SiC is useful for realizing short-wavelength blue and ultraviolet (UV) optoelectronics.
6H-SiC-based pn junction light-emitting diodes (LEDs) were the first semiconductor devices
to cover the blue portion of the visible color spectrum, and became the first SiC-based devices to [...]
2018-06-28meta-author
2-20.Linear Crystallographic Defects
Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials is not perfect. The regular patterns are [...]
2018-06-28meta-author
5-2-2-1 SiC Crystallography: Important Polytypes and Definitions
Silicon carbide occurs in many different crystal structures, called polytypes. A more comprehensive
introduction to SiC crystallography and polytypism can be found in Reference 9. Despite the fact that
all SiC polytypes chemically consist of 50% carbon atoms covalently bonded [...]
2018-06-28meta-author