2-8.Secondary Flat Orientation
A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2018-06-28meta-author
2-25.FWHM
Full width at half maximum (FWHM) is an expression of the extent of a function, given by the difference between the two extreme values of the independent variable at which the dependent variable is equal to half of its maximum value.
2018-06-28meta-author
2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
2018-06-28meta-author
2-23.Micropipe density
A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
2018-06-28meta-author
5-6-4-1-1 SiC Schottky Power Rectifiers.
4H-SiC power Schottky diodes (with rated blocking voltages up to 1200 V and rated on-state currents up to 20 A as of this writing) are now commercially available . The basic structure of these unipolar diodes is a patterned metal [...]
2018-06-28meta-author
2-30.Dopant
A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the opticalproperties of the substance. In the case of crystalline substances, the atoms of [...]
2018-06-28meta-author