PAM XIAMEN offers Single-emitter LD Chip 880nm @8W.
Brand: PAM-XIAMEN
Wavelength: 880nm
Stripe width: 150um
Output Power: 8W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
PAM XIAMEN offers YAG Er Doped Yttrium Aluminium Garnet Laser Crystal.
PAM XIAMEN can supply a wide range of Er:YAG, Er doped Yttrium aluminium garnet single crystals and epi-ready crystal substrates to meet customer’s specific requirements.
Specifications:
Crystal structure: cubic
Lattice parameters: 12.01 Å
Orientations available: <111> or <100> crystalline within 5°
Melt [...]
2019-03-15meta-author
PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm
Silicon ingot, per SEMI, G Ø25mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-26meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
280
P/E
0.5-0.6
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/E
0.08-0.10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
0.073-0.090
SEMI Prime,
p-type Si:B
[100]
2″
250
P/P
0.02-0.04
SEMI Prime
p-type Si:B
[100]
2″
225
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
1000
P/P
0.015-0.045
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
0.008-0.095
SEMI Prime
p-type Si:B
[100-4°]
2″
300
P/P
0.003-0.004
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
300
P/E
0.0026-0.0029
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.0023-0.0029
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.001-0.006
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
280
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
Prime, NO Flats
p-type Si:B
[100]
2″
500
P/P
0.001-0.005
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
300
P/E
20-25
SEMI Prime
p-type Si:B
[111]
2″
380
P/P
10-20
SEMI Prime
p-type Si:B
[111-2° towards[112]]
2″
1000
P/P
10-30
SEMI Prime
p-type Si:B
[111]
2″
500
P/P
2.4-2.6
SEMI Prime
p-type [...]
2019-03-07meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author
The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
2020-03-17meta-author