PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm
Silicon ingot, per SEMI, G Ø25mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58 n- Si:P 60±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 8±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 5 n- Si:P 3±10% N/N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60 n- Si:P 40.5±4.5 N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 20 n- Si:P 10±2 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- [...]
PAM XIAMEN offers Middium and Small Size Photomask. Chromium Plate Accuracy (Standard Size:6inch Quartz) Accuracy/Grade Max Accuracy High-precision Medium accuracy General accuracy Min.Line/Space Width 0.75μm/0.75μm 3μm/3μm 5μm/5μm 10μm/10μm CD Control ±0.1μm ±0.3μm ±0.5μm ±1.0μm Total Pitch Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Registration Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Overlay Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Orthogonality ±0.5μrad ±0.75μrad ±1.0μrad ±2.0μrad Chrome Plate Material (Photomask Blank Plate) Material Soda Lime Glass、Quartz Max. Size 3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″ Normal Size 1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm Thickness 6.35±0.2mm (QZ) Film Type Low Reflectance Chrome Optical Density(λ=450nm) Between Plates3.0±0.3 In Plate±0.3 Reflectivity(λ=436nm) Between Plates10±5% In Plate±2% Main application areas: 1. IC Bumping, [...]
PAM XIAMEN offers Silicon Ingots. Material Description 4″Ø×219mm p-type Si:B[110]±1.5°, (59-67)Ohmcm, RRV<2.4%, One SEMI Flat, Diameter=(100.6-100.8) mm, C<3E16/cc, O2<9E17/cc 4″Ø ingot p-type Si:B[110] ±2°, Ro: 0.001-0.010 Ohmcm, Ground, SEMI 4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F)) 4″Ø ingot p-type Si:B[111], [...]
Semi-insulating GaAs substrates 3 inch Dia 3 inch Semi-insulating GaAs(Gallium Arsenide) substrates are available, please see below specification: Parameters Specifications Material VGF GaAs Single Crystal Wafer Grade Prime, Epi-Ready Doping Semi-Insulating, Undoped Wafer OD 76.2+/-0.63mm Wafer Orientation (100)+/-0.25 deg. Primary Flat Length 22.22+/-3.17 mm Secondary Flat Length 11.15+/-1.52 mm Primary Flat Location (01-1)+/-0.5◦ deg. (US SEMI) Secondary Flat Location (011)+/-0.5 deg. (US SEMI) Primary/Secondary Flat Orientation 90◦+/-0.5◦ Secondary [...]
PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111-5° towards[110]] ±0.25° 3″ 1000 P/E >5 SEMI Prime, in hard cassettes of 6, 6 & 7 wafers n-type Si:P [111-5° towards[110]] ±0.25° 3″ 1300 P/E >5 SEMI Prime, hard cst n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 E/E >5 SEMI, LaserMark, in opened hard cast n-type Si:P [111-2.5°] ±0.5° 3″ 380 P/E 1-3 SEMI Prime n-type Si:P [111] ±0.5° 3″ 380 P/E 1-10 SEMI Primet n-type Si:P [111-3.0°] ±1° 3″ 381 P/E 1-20 {1.7-5.7} SEMI Test n-type Si:P [111] ±0.5° 3″ 570 P/P 1-10 SEMI Primet n-type Si:Sb [111] ±0.5° 3″ 380 P/E 0.019-0.026 SEMI Prime, in Empak cassettes [...]
