PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm
Silicon ingot, per SEMI, G Ø25mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
PAM XIAMEN offers ZnTe single crystal substrate. ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40 ZnTe, N type, (110) [...]
PAM XIAMEN offers 4″ Silicon Wafer-19 as follows, while silicon wafer list includes, but not limited to the following. Silicon wafers, P/E 4″Ø×400±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, One-side-polished, back-side etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000µs. For more polished wafer specification, please [...]
Indium antimonide (InSb) detector is sensitive for the mid-wave infrared (MWIR) band. In terms of mid-infrared detection in the 3-5um band, due to the advantages of mature material technology, high sensitivity and good stability, InSb detectors stand out from detectors based on other materials. [...]
PAM XIAMEN offers SBN crystal. Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal [...]
The single crystal germanium is n type at room temperature, and the resistivity shows non-single dependence on temperature. When conduction type transits from n type to p type, the bulk germanium resistivity is in maximum, and the carrier mobility is declining. With the increasing [...]
