PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm
Silicon ingot, per SEMI, G Ø25mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 P Boron CZ -111 1-20 450-500 P/P PRIME 100 P Boron CZ -111 1-20 500-550 P/E PRIME 100 P Boron CZ -110 1-20 450-500 P/P PRIME 100 P Boron CZ -110 1-20 500-550 P/E PRIME 100 Any Any CZ Any Any 350-600 P/E TEST 100 Undoped VGF -100 >1E7 500-600 P/P 100 Undoped VGF -100 >1E7 500-600 P/P 100 N Si VGF -100 600-650 P/E PRIME 100 P Zn VGF (100) off 2 deg twd <110> 0.01 375-425 P/E epi 100 P Zn VGF -100 600-650 P/E PRIME 100 Si Undoped VGF -100 >1E7 600-650 P/E PRIME 100 Si Undoped VGF -100 10000000 610-660 P/P EPI 100 Undoped CZ -100 >30 450-500 P/P EPI 100 Undoped CZ -100 >30 500-550 P/E EPI 100 N Sb CZ (100)-9 <.4 150-200 P/E EPI 100 N Sb CZ -100 .005-.02 450-500 P/P EPI 100 N Sb CZ -100 .005-.02 500-550 P/E EPI 100 P Ga CZ -100 .01-.04 450-500 P/P EPI 100 P Ga CZ -100 .01-.04 500-550 P/E EPI 100 N Si VGF -100 600-650 P/E PRIME 100 Si Fe VGF -100 5000000 600-650 P/E PRIME 100 Single Wafer Shipper ePak Holds1Wafer PRIME 100 Shipping Cassette ePak Holds25Wafers Clean Room 101.6 N Phos CZ -100 1-20 300-350 P/P 101.6 N Phos CZ -100 1-20 350-400 P/E 101.6 P Boron CZ -100 1-20 300-350 P/P 101.6 P Boron CZ -100 1-20 350-400 P/E For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
PAM-XIAMEN offers PSS patterned sapphire substrate for high brightness GaN based LED EPI growing application. The patterned sapphire substrate wafer is to grow a dry etching mask on the sapphire substrate. The mask is engraved by a standard photolithography process. Then, the sapphire is etched by ICP etching [...]
PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um. Si wafer Method: Cz Orientation: <111> Type: P-Type Dopant: Boron Resistivity: 0.1-13 ohm.cm Diameter: 150 ± 0.1 mm Thickness: 675 ± 25 um Chamfer Front side: Epi-ready Back side: etched BOW < 30um Warp [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer-7 GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, One SEMI Flat Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs For more information, send us email at [email protected] and [email protected]
Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers, provides 808nm AlGaInP/GaAs laser wafer. AlGaInP laser epitaxial wafers are high-quality semiconductor materials that can emit light in semiconductor lasers. After made on the laser chip, these materials are energized and can emit light. Then, the electrical [...]
Defects of Silicon Carbide can bring about different natures, and these natures often need to be avoided. However, they have a positive effect in using. The representative utilization of the defects is a variety of point defects of silicon carbide. What Are Point Defects of [...]
