Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
Silicon wafers with various metal depositions are for sale in sizes from 2 inch to 12 inch. Metal deposition on silicon wafer is usually processing on the substrate surface, and thickness of the substrate typically is 300um~700um. A wafer list is shown below for [...]
2021-10-13meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Si
3″
P/P
SEMI TEST (Unsealed)t
Si
3″
P/P
SEMI TEST (Unsealed)t
n-type Si:P
[100] ±0.1°
3″
380
P/E
FZ >5,000
SEMI Test, Bad Lasermark on back. To use with chuck light polish needed on back
n-type Si:P
[100]
3″
381
P/P
FZ 100-500
SEMI Prime
n-type Si:P
[111]
3″
300
P/E
FZ 61-95
Prime, NO Flatst
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
Prime, NO Flats, Individual cst
Intrinsic Si:-
[111] ±0.5°
3″
1975
P/P
FZ >20,000
Prime, NO Flats, Individual cst
p-type Si:B
[110]
3″
380
P/E
1-10
1 F @ <1,-1,0>
p-type Si:B
[100]
3″
380
P/P
80-170
SEMI Prime
p-type Si:B
[100]
3″
300
P/P
30-35
SEMI Prime
p-type Si:B
[100]
3″
200
P/E
10-20
SEMI [...]
2019-03-06meta-author
We provide thermal oxide wafer with/without Ti layer/Pt layer in diameter from 2″ to 6″,now we give examples as follows:
1) 4 inch,silicon prime/test wafer,deposited with 5000 Angstroms of silicon oxide
2) Pt layer+Ti layer+thermal oxide layer deposit on silicon wafer:
4 inch Prime grade silicon,1-20 ohm [...]
White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates
We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by [...]
2018-07-12meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-11
4″ Silicon Wafer
bare wafer
orientation <111>
P-type doped Boron
DSP/SSP
Thickness 500-550μm
Resistivity 0.01-0.02Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-23meta-author