P Type Indium Phosphide Semiconductor Substrate

P Type Indium Phosphide Semiconductor Substrate

Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy to make semi insulating materials, suitable for making high-frequency microwave devices and circuits, high working temperature (400-500 ℃) and so on. These advantages make indium phosphide wafers widely used in solid state luminescence, microwave communications, optical communications, satellites and other fields. PAM-XIAMEN is able to offer conductive indium phosphide semiconductor wafer. More additional wafer information, please view: https://www.powerwaywafer.com/compound-semiconductor/inp-wafer.html.

The P-type indium phosphide substrates, which are mainly prepared by Zn doping, are listed as follows for your reference:

Indium Phosphide Semiconductor Wafer

1. Indium Phosphide Semiconductor Substrate Parameters

No. 1 50.5mm InP Substrate

Item Parameter UOM
Material InP
Conduction Type/Dopant S-C-P/Zn
Grade Prime
Diameter 50.5±0.4 mm
Orientation (100)±0.5°
Orientation Angle /
Flat Option EJ
Primary Flat Orientation (0-1-1)±0.02°
Primary Flat Length 16±1
Secondary Flat Orientation (0-11)
Secondary Flat Length 7±1 mm
Carrier Concentration Min 0.6E18 Max 6E18 cm-3
Resistivity Min / Max / ohm*cm
Mobility Min / Max / cm2/V*sec
EPD Ave <1000 Max / cm-2
Laser Mark Back side major flat
Edge Rounding 0.25 (conform to SEMI Standards) mmR
Thickness Min 325 Max 375 μm
TTV Max 10 μm
TIR Max 10 μm
BOW Max 10 μm
Warp Max 15 μm
Surface Side 1 Polished Side 2 Etched
Particle Count /
Package Individual container filled with N2
Epi-ready Yes
Remark Special specifications will be discussed separately

 

No.2 76.2mm InP Wafer

Item Parameter UOM
Material InP
Conduction Type/Dopant S-C-P/Zn
Grade Prime
Diameter 76.2±0.4 mm
Orientation (100)±0.5°
Orientation Angle /
Flat Option EJ
Primary Flat Orientation (0-1-1)
Primary Flat Length 22±1
Secondary Flat Orientation (0-11)
Secondary Flat Length 12±1 mm
Carrier Concentration Min 0.6E18 Max 6E18 cm-3
Resistivity Min / Max / ohm*cm
Mobility Min / Max / cm2/V*sec
EPD Ave <1000 Max / cm-2
Laser Mark Back side major flat
Edge Rounding 0.25 (conform to SEMI Standards) mmR
Thickness Min 600 Max 650 μm
TTV Max 10 μm
TIR Max 10 μm
BOW Max 10 μm
Warp Max 15 μm
Surface Side 1 Polished Side 2 Etched
Particle Count /
Package Individual container filled with N2
Epi-ready Yes
Remark Special specifications will be discussed separately

 

No.3 100mm InP Semiconductor Wafer

Item Parameter UOM
Material InP
Conduction Type/Dopant S-C-P/Zn
Grade Prime
Diameter 100±0.4 mm
Orientation (100)±0.5°
Orientation Angle /
Flat Option EJ
Primary Flat Orientation (0-1-1)
Primary Flat Length 32.5±1
Secondary Flat Orientation (0-11)
Secondary Flat Length 18±1 mm
Carrier Concentration Min 0.6E18 Max 6E18 cm-3
Resistivity Min / Max / ohm*cm
Mobility Min / Max / cm2/V*sec
EPD Ave <5000 Max / cm-2
Laser Mark Back side major flat
Edge Rounding 0.25 (conform to SEMI Standards) mmR
Thickness Min 600 Max 650 μm
TTV Max 15 μm
TIR Max 15 μm
BOW Max 15 μm
Warp Max 15 μm
Surface Side 1 Polished Side 2 Etched
Particle Count /
Package Individual container filled with N2
Epi-ready Yes
Remark Special specifications will be discussed separately

 

2. What Are the Similarities and Differences Among N Type InP, P Type InP and Semi-insulating InP?

InP single crystals can be divided into n type, p type and semi insulating type. According to the electrical properties, indium phosphide single crystals can be divided into N type, P type and semi insulating type. The similarities and differences are mainly analyzed as table below from its dopant, carrier concentration, dislocation density and indium phosphide applications:

Similarities and Differences Among N Type InP, P Type InP and Semi-insulating InP
Item Dopant Carrier Concentration (cm-3) Dislocation Density (cm-2) Applications
N Type InP Undoped ≤3.0 x 1016 ≤5.0 x 102 LD, LED, PIN PD and PIN APD
S (1~8)x 1018 ≤5.0 x 102
Sn (1~8)x 1018 ≤5.0 x 102
P Type InP Zn (1~8)x 1018 ≤5.0 x 102 high-efficiency radiation resistant solar cells, etc
Semi-insulating InP Fe

 

N/A ≤5.0 x 102 low noise and broadband microwave devices, terminal guidance and anti-interference millimeter wave devices, photoelectric integrated circuits, etc

 

3. About P Type Indium Phosphide Single Crystal Grown By VGF

At present, indium phosphide single crystals are mainly prepared by VGF (vertical gradient solidification) method in indium phosphide foundry. However, hydroxyl (OH) impurities exist in quartz tubes and boron nitride crucibles used in the preparation of indium phosphide crystals through VGF, and water exists in boron oxide as a covering agent. Hydroxyl (OH) impurities and water are the main sources of VInH4 donor defects and vacancy donor defects in indium phosphide semiconductor crystal, while VInH4 donor defects and vacancy donor defects are the key factors affecting the electrical properties of low concentration P-type InP single crystal materials.

The electrical parameters and growth thermal field of the InP polycrystals used for preparing indium phosphide single crystals can affect the doping activation efficiency of zinc, and then affect the zinc doping concentration of P-type indium phosphide single crystals.

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