Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy to make semi insulating materials, suitable for making high-frequency microwave devices and circuits, high working temperature (400-500 ℃) and so on. These advantages make indium phosphide wafers widely used in solid state luminescence, microwave communications, optical communications, satellites and other fields. PAM-XIAMEN is able to offer conductive indium phosphide semiconductor wafer. More additional wafer information, please view: https://www.powerwaywafer.com/compound-semiconductor/inp-wafer.html.

The P-type indium phosphide substrates, which are mainly prepared by Zn doping, are listed as follows for your reference:

1. Indium Phosphide Semiconductor Substrate Parameters

No. 1 50.5mm InP Substrate

Item	Parameter				UOM
Material	InP
Conduction Type/Dopant	S-C-P/Zn
Grade	Prime
Diameter	50.5±0.4				mm
Orientation	(100)±0.5°
Orientation Angle	/
Flat Option	EJ
Primary Flat Orientation	(0-1-1)±0.02°
Primary Flat Length	16±1
Secondary Flat Orientation	(0-11)
Secondary Flat Length	7±1				mm
Carrier Concentration	Min	0.6E18	Max	6E18	cm-3
Resistivity	Min	/	Max	/	ohm*cm
Mobility	Min	/	Max	/	cm2/V*sec
EPD	Ave	<1000	Max	/	cm-2
Laser Mark	Back side major flat
Edge Rounding	0.25 (conform to SEMI Standards)				mmR
Thickness	Min	325	Max	375	μm
TTV	Max	10			μm
TIR	Max	10			μm
BOW	Max	10			μm
Warp	Max	15			μm
Surface	Side 1	Polished	Side 2	Etched
Particle Count	/
Package	Individual container filled with N2
Epi-ready	Yes
Remark	Special specifications will be discussed separately

 

No.2 76.2mm InP Wafer

Item	Parameter				UOM
Material	InP
Conduction Type/Dopant	S-C-P/Zn
Grade	Prime
Diameter	76.2±0.4				mm
Orientation	(100)±0.5°
Orientation Angle	/
Flat Option	EJ
Primary Flat Orientation	(0-1-1)
Primary Flat Length	22±1
Secondary Flat Orientation	(0-11)
Secondary Flat Length	12±1				mm
Carrier Concentration	Min	0.6E18	Max	6E18	cm-3
Resistivity	Min	/	Max	/	ohm*cm
Mobility	Min	/	Max	/	cm2/V*sec
EPD	Ave	<1000	Max	/	cm-2
Laser Mark	Back side major flat
Edge Rounding	0.25 (conform to SEMI Standards)				mmR
Thickness	Min	600	Max	650	μm
TTV	Max	10			μm
TIR	Max	10			μm
BOW	Max	10			μm
Warp	Max	15			μm
Surface	Side 1	Polished	Side 2	Etched
Particle Count	/
Package	Individual container filled with N2
Epi-ready	Yes
Remark	Special specifications will be discussed separately

 

No.3 100mm InP Semiconductor Wafer

Item	Parameter				UOM
Material	InP
Conduction Type/Dopant	S-C-P/Zn
Grade	Prime
Diameter	100±0.4				mm
Orientation	(100)±0.5°
Orientation Angle	/
Flat Option	EJ
Primary Flat Orientation	(0-1-1)
Primary Flat Length	32.5±1
Secondary Flat Orientation	(0-11)
Secondary Flat Length	18±1				mm
Carrier Concentration	Min	0.6E18	Max	6E18	cm-3
Resistivity	Min	/	Max	/	ohm*cm
Mobility	Min	/	Max	/	cm2/V*sec
EPD	Ave	<5000	Max	/	cm-2
Laser Mark	Back side major flat
Edge Rounding	0.25 (conform to SEMI Standards)				mmR
Thickness	Min	600	Max	650	μm
TTV	Max	15			μm
TIR	Max	15			μm
BOW	Max	15			μm
Warp	Max	15			μm
Surface	Side 1	Polished	Side 2	Etched
Particle Count	/
Package	Individual container filled with N2
Epi-ready	Yes
Remark	Special specifications will be discussed separately

 

2. What Are the Similarities and Differences Among N Type InP, P Type InP and Semi-insulating InP?

InP single crystals can be divided into n type, p type and semi insulating type. According to the electrical properties, indium phosphide single crystals can be divided into N type, P type and semi insulating type. The similarities and differences are mainly analyzed as table below from its dopant, carrier concentration, dislocation density and indium phosphide applications:

Similarities and Differences Among N Type InP, P Type InP and Semi-insulating InP
Item	Dopant	Carrier Concentration (cm-3)	Dislocation Density (cm-2)	Applications
N Type InP	Undoped	≤3.0 x 1016	≤5.0 x 102	LD, LED, PIN PD and PIN APD
	S	(1~8)x 1018	≤5.0 x 102
	Sn	(1~8)x 1018	≤5.0 x 102
P Type InP	Zn	(1~8)x 1018	≤5.0 x 102	high-efficiency radiation resistant solar cells, etc
Semi-insulating InP	Fe	N/A	≤5.0 x 102	low noise and broadband microwave devices, terminal guidance and anti-interference millimeter wave devices, photoelectric integrated circuits, etc

 

3. About P Type Indium Phosphide Single Crystal Grown By VGF

At present, indium phosphide single crystals are mainly prepared by VGF (vertical gradient solidification) method in indium phosphide foundry. However, hydroxyl (OH) impurities exist in quartz tubes and boron nitride crucibles used in the preparation of indium phosphide crystals through VGF, and water exists in boron oxide as a covering agent. Hydroxyl (OH) impurities and water are the main sources of VInH4 donor defects and vacancy donor defects in indium phosphide semiconductor crystal, while VInH4 donor defects and vacancy donor defects are the key factors affecting the electrical properties of low concentration P-type InP single crystal materials.

The electrical parameters and growth thermal field of the InP polycrystals used for preparing indium phosphide single crystals can affect the doping activation efficiency of zinc, and then affect the zinc doping concentration of P-type indium phosphide single crystals.

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.