PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
100
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
100
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
100
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
100
N
Phos
CZ
-100
300-350
P/P
PRIME
100
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
100
N
Phos
CZ
-100
350-400
P/P
PRIME
100
N
Phos
CZ
-100
1-3
350-400
P/P
PRIME
100
N
As
CZ
-100
.001-.005
375-425
P/P
PRIME
100
N
Phos
CZ
-100
1-20
375-425
P/E
PRIME
100
N
Phos
CZ
-100
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
450-500
P/P
PRIME
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
PRIME
100
N
Phos
FZ
-100
>3000
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
500-550
P/E
PRIME
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
PRIME
100
N
Phos
FZ
-100
>3000
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
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Silicon Wafer Specifications:
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