ZnO/Pt/Ti film on Si

ZnO/Pt/Ti film on Si

PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer.

ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)

Silicon Wafer Specifications:

Film:         ZnO/Pt/Ti   thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp
ZnO=150nm,  ZnO film: c-axis, medium (001) orientation 
 Pt/Ti film: highly (111) orientation    Pt=150nm  Ti( Glue layer)=20-40 nm
Resistivity:                  1-10 ohm.cm
Substrate Size:            4″ diameter +/- 0.5 mm x 0.525 mm
Polish:                        one side polished
Surface roughness:      < 20 A RMS
Maximum Thermal Budget of Pt film: ~750 degree C / 1 hr

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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