PAM XIAMEN offers 6″ FZ Silicon Ignot.
6″ Silicon Ingot
FY37b. 11.817Kg Silicon ingot, per SEMI,
G 150.7±0.3mmØ,
FZ Intrinsic undoped Si:-[100]±2.0°,
Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
Length: 286mm
For more information, please visit our website: [...]
2019-07-03meta-author
From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. [...]
Highlights
•We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.
•We examine impact of temperature on the electrical parameters of fabricated devices.
•The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V.
•The SD-HEMTs are characterized by lower increase of Ron [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAs (Indium Gallium Arsenide) wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. [...]
2017-06-19meta-author
PAM XIAMEN offers single crystal undoped or Ga-doped ZnO wafer substrate, which is grown by hydrothermal method under high pressure.There are two structures mainly in ZnO wafer: Hexagonal wurtzite and cubic zinc blende, what we offered is Hexagonal wurtzite.
1.Properties of ZnO Wafer:
1.1 General Properties [...]
2019-05-21meta-author
PAM XIAMEN offers LiF Lithium Fluoride Crystal.
LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
2019-03-14meta-author