PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-04meta-author
AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
4″
1000
P/E
<0.01
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° CW from Primary
n-type Si:P
[110] ±0.5°
4″
500
P/P
3-10
SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
n-type Si:P
[110] ±0.3°
4″
525
P/P
3-10
SEMI [...]
2019-03-05meta-author
PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips:
1. Specifications of SiC Chip Substrate
No 1. PAM200508-SIC-AU
10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type.
Grade: dummy
Thickness: approx. 350um
Backside surface: with metal films of Ti-Ni-Au
Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um),
No 2. SiC Wafer with [...]
2020-07-17meta-author
PAM XIAMEN offers6″ FZ Silicon Wafer-5
Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
Warp<60μm,
One-side-polished, Particles: ≤10@≥0.3μm,
MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched,
Tarnish, orange peel, contamination, haze,
micro scratch, chips, edge chips, crack,
crow feet, pin hole, pits, dent, waviness,
smudge&scar on [...]
2019-09-19meta-author
PAM-XIAMEN can offer InAlN HEMT( Indium Aluminium Nitride High Electron Mobility Transistor) structure on 8-inch silicon. InAlN band gap is a direct band gap, and InAlN HEMT is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride [...]
2021-04-16meta-author