PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
Semiconductor sensor refers to a sensor made by utilizing various physical, chemical, and biological characteristics of semiconductor materials. The majority of the semiconductor materials used are silicon, as well as III-V and II-VI element compounds. The researchers used the excellent performance and availability of SiC [...]
2023-11-03meta-author
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all wide band gap [...]
2020-09-22meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
21
n- Si:P
0.15
n/n+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
22±1.5
p- Si:B
300±50
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
6.85±0.75
p- Si:B
0.75±0.15
P/P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 ±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
80±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
200±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
32
p- Si:B
600 ±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.01-0.02
P/E
32.5
p- Si:B
100±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
40
p- Si:B
550 ±10%
P/P+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
p- Si:B
10±1.5
P/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
According to the latest report from LEDinside, a division of the market research firm TrendForce, 2017-2021 LED Industry Demand and Supply Data Base- 2Q17, mainly analyzes top six LED demand and supply market trend in 2017, including IT display market, lighting market trend, automotive LED market [...]
2017-06-05meta-author