Semiconductor Sensor Fabricated on SiC Epitaxial Wafer

Semiconductor Sensor Fabricated on SiC Epitaxial Wafer

Semiconductor sensor refers to a sensor made by utilizing various physical, chemical, and biological characteristics of semiconductor materials. The majority of the semiconductor materials used are silicon, as well as III-V and II-VI element compounds. The researchers used the excellent performance and availability of SiC wafers to develop SiC based semiconductor sensor suitable for harsh environments. SiC semiconductor-based sensors have excellent large bandgap, which can eliminate heat induced minority carrier leakage and operate at higher temperatures. PAM-XIAMEN can provide customized SiC epitaxial growth for preparing semiconductor sensors (e.g. van der Pauw sensor), with specific epitaxial structures such as:

SiC wafer for semiconductor sensor

1. SiC Epitaxy Growth for Van Der Pauw Sensor

Epi Layer Thickness Dopant
p-type epilayer 1um Al:1018cm-3
n-type buffer layer 1um N:1018cm-3
n type 4H-SiC (0001) Substrate    


2. SiC Semiconductor Sensor Applications

SiC thick film semiconductor sensor can compensate for the performance defects of Si based sensor in harsh environments such as high temperature and high pressure, thus having a broader application space. The details are as follows:

1) SiC high-temperature sensors, due to their large temperature measurement range (0-500 ℃) and ease of integration, can be widely used for temperature monitoring in the processing industry, mechanical industry, and petrochemical industry, temperature control in household appliances and food industry, and critical temperature monitoring in aerospace and automotive industries;

2) SiC high-temperature pressure sensors have broad application prospects in civil applications due to their resistance to high temperature and strong radiation. SiC pressure sensors are mainly used for pressure measurement in boilers, pipelines, high-temperature reaction vessels, various engine chambers, and oil wells;

3) SiC gas sensors, especially capacitive sensors, can operate at temperatures up to 1000 ℃ and have a response time of milliseconds. At present, SiC gas sensors have achieved normal operation at high temperatures of 500 ℃, basically meeting the requirements of high-temperature applications such as internal combustion engine monitoring, automotive exhaust emissions, and spacecraft jet engine exhaust diagnosis.


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