We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Frequency Comb Generation From Stimulated Brillouin Scattering and Semiconductor Laser Diodes
Published by:
(Electrical Engineering) in The [...]
2019-10-31meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of [...]
2022-08-16meta-author
PAM XIAMEN offers MgF2 crystal.
MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Tetragonal
a = 4.64
1255 oC
3.18
6 (mohs)
13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c
ho 1.37740
c = 3.06
he 1.38945
MgF2 [...]
2019-05-10meta-author
Defects of Silicon Carbide can bring about different natures, and these natures often need to be avoided. However, they have a positive effect in using. The representative utilization of the defects is a variety of point defects of silicon carbide.
What Are Point Defects of [...]
2021-03-30meta-author
Near-band-edge luminescence in heavily doped gallium arsenide
The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. [...]
2018-08-28meta-author