Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: Is it possible to use 4” non-patterned sapphire for fabrication? A:Not possible, currently all the manufacturers swift to patterned sapphire based wafer, including us, however if you really need flat sapphire based wafer, we we can offer 2″ size.
Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
Q:The ideal waverlength for us is 465 nm, can you offer?. A:It is no problem, but you should know the wavelength should be a range, what we will offer you 465+/-2nm.
Q:For pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flipchip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. A:LED light is sourcing from mqw light, emitting in all directions, p-GaN is [...]
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
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