Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds
Gallium Nitride(GaN) is currently used in a host of technologies, from LED lighting to optic sensors, but it is not in widespread use in biomedical implants. However, the new findings from NC State and [...]
2012-06-20meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
PAM XIAMEN offers ZnO thin film on Sapphire.
ZnO Film (0.5 um) on Sapphire(0001), 10x10x0.5mm,1sp , undoped
ZnO Film (0.5 um) on Sapphire(0001), 5x5x0.5mm ,1sp, undoped
ZnO Film on Sapphire(0001), 2″x0.5mm, undoped , ZnO: 0.5 um
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-29meta-author
PAM-XIAMEN can supply silicon wafers to meet your application demands, more wafer specifications please visit: https://www.powerwaywafer.com/silicon-wafer.
The purity, surface flatness, cleanliness and impurity contamination of semiconductor silicon wafers have an extremely important influence on the chips. The local flatness of silicon wafer is one of [...]
2022-09-20meta-author
GaN Substrates Offer High Performance At A Price
GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to [...]
2013-03-21meta-author
PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 0.5±0.03mm
Item
Unit
Value
Test Standard
1)Colour
—-
Gray
3.2
2)Density
g/cm³
≥3.33
GB/T 2413
3)Thermal Conductivity
20℃,W/(m·K)
≥170
GB/T 5598
4)Dielectric Constant
1MHz
8~10
GB/T 5594.4
5)Dielectric Strength
KV/mm
≥17
GB/T 5593
6)Flexural Strength
MPa
≥450
GB/T 5593
7)Camber
Length‰
≤2‰
8)Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9)Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃,Ω.cm
≥1013
GB/T 5594.5
11)Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-03meta-author