Q:We want to know the refractive index of these SiC wafers?
A:The refractive index is no=2.707, ne=2.755
Q:We want to know the refractive index of these SiC wafers?
A:The refractive index is no=2.707, ne=2.755
Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure? A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
Q: Is it possible to use 4” non-patterned sapphire for fabrication? A:Not possible, currently all the manufacturers swift to patterned sapphire based wafer, including us, however if you really need flat sapphire based wafer, we we can offer 2″ size.
Q:For pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flipchip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. A:LED light is sourcing from mqw light, emitting in all directions, p-GaN is [...]
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
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