Q: Could you please provide information about standard epi structure of InGaAsP/InP wafer?
A: Here we only can offer you general structure:
| Layer | Material |
| 6 | InP |
| 5 | GaInAs |
| 4 | GaInAsP |
| 3 | InP |
| 2 | AlGaInAs MQW PL 1500-1560nm |
| 1 | InP buffer |
| InP substrate |
Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A:Sorry, we can not offer fabrication of p and n [...]
Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2
Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure? A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]
Q:The ideal waverlength for us is 465 nm, can you offer?. A:It is no problem, but you should know the wavelength should be a range, what we will offer you 465+/-2nm.
Q: We need SiC bare wafer, mechanical grade, do you have? A: Sure, mechanical grade is just our dummy grade wafer.
Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, [...]
