Q: Could you please provide information about standard epi structure of InGaAsP/InP wafer?
A: Here we only can offer you general structure:
| Layer | Material |
| 6 | InP |
| 5 | GaInAs |
| 4 | GaInAsP |
| 3 | InP |
| 2 | AlGaInAs MQW PL 1500-1560nm |
| 1 | InP buffer |
| InP substrate |
Q:Do you have LED wafers that can be used for fabrication of various research oriented structures? If yes, is your wafer unfabricated ? A: Yes, we can offer LED wafers unfabricated without contact, however we also can offer COW(chip on wafer).
Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]
Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size? A:No problem, any size is workable.
Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure? A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]
Q:In your web site, the picture of the SiC wafer does not look like regular, transparent-light green color SiC wafer. Why is that? A: Good question, the picture in website is Polarized light image.In regular, it is green color or grey color.
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
