Al2O3 (Sapphire)-5

PAM XIAMEN offers high-quality Al2O3 (Sapphire).

Al2O3(10-14)

Al2O3- Sapphire Wafer, (10-14), 10x10x0.5mm, 1 SP

Fearures:
Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
Wafer size: 10 x 10 x 0.5 mm thick
Orientation: (10-14) +/-0.5o
Polished surface: Substrate surface is EPI polished via a special CMP procedure with RA < 5 A
1 side polished
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Typical Properties:
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
Melting Point: 2040 degree C
Density: 3.97 gram/cm2
Growth Technique: CZ
Crystal Purity: >99.99%
Hardness: 9 ( mohs)
Thermal Expansion: 7.5×10-6 (/ oC)
Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz: < 2×10-5 at A axis, <5 x10-5 at C axis

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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