980 Single Mode Laser Chip

980 Single Mode Laser Chip (PAM200827-LD)

PAM XIAMEN offers 980 Single Mode Laser Chip

	Powerwaywafer
980 Single mode laser chip property	Minimum	Typical	Maximum
Central Wavelength 969 974 979 nm	970	980	990
Output Power (mW)	300	400	500
Working Mode CW	—	—	—
Longitudinal mode Single	—	—	—
Spectrum Width	—	—	—
Emitter Width	—	—	—
Cavity Width (μm)	640	650	660
Cavity Length (μm)	4490	4500	4510
Cavity Thickness (μm)	115	125	135
Fast Axis Divergence(FWHM) 30 Deg	—	—	—
Slow Axis Divergence (FWHM) 14 Deg	—	—	—
Slope Efficiency 0.75 0.8 W/A	—	—	—

For more information, please contact us email at [email protected] and [email protected]

2020-09-16

2″ Silicon Wafer-1

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 2″ 279 P/E FZ >1,000 p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette) p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers p-type Si:B [111-7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI, Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI TEST (Scratched), Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI [...]

2019-03-07meta-author

Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade )-2

PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. 10×10 mm substrates [...]

2019-05-15meta-author

Li – Lithium Metal Foil

PAM XIAMEN offers Lithium Metal Foil. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension “16 mm x 0.6 mm (diameter x thickness)” For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-05-08meta-author

Transform Infrared Spectroscopy (FTIR) Undoped Silicon

PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate Below is one of our silicon items that is great for FTIR Spectroscopy. Si 100mm Undoped <100> >10,000 ohm-cm 525um DSP Prime Silicon shows promise to be the next-evolution anode material for lithium-ion batteries (LIBs). But Silicon electrodes exhibit significant [...]

2019-02-26meta-author

Photoluminescence and Raman studies of GaN films grown by MOCVD

Photoluminescence and Raman studies of GaN films grown by MOCVD The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]

2013-04-01meta-author

LIALO2 LITHIUM ALUMINATE CRYSTALS SUBSTRATES

PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates. Main Parameters Crystal structure M4 Unit cell constant a=5.17 A c=6.26 A Melt point（℃） 1900 Density 2.62（g/cm3） Hardness 7.5（mohs） Size 10×3，10×5，10×10，15×15，20×15，20×20， Ф15,Ф20，Ф1″，Ф2″, Ф2.6″ Thickness 0.5mm, 1.0mm Polishing Single or double side polished Crystal [...]

2019-03-13meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

980 Single Mode Laser Chip

980 Single Mode Laser Chip