980 Single Mode Laser Chip

980 Single Mode Laser Chip (PAM200827-LD)

PAM XIAMEN offers 980 Single Mode Laser Chip

	Powerwaywafer
980 Single mode laser chip property	Minimum	Typical	Maximum
Central Wavelength 969 974 979 nm	970	980	990
Output Power (mW)	300	400	500
Working Mode CW	—	—	—
Longitudinal mode Single	—	—	—
Spectrum Width	—	—	—
Emitter Width	—	—	—
Cavity Width (μm)	640	650	660
Cavity Length (μm)	4490	4500	4510
Cavity Thickness (μm)	115	125	135
Fast Axis Divergence(FWHM) 30 Deg	—	—	—
Slow Axis Divergence (FWHM) 14 Deg	—	—	—
Slope Efficiency 0.75 0.8 W/A	—	—	—

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-09-16

Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]

2013-03-29meta-author

Improved ohmic contact to the n-type 4H-SiC semiconductor using cobalt silicides

Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face [...]

2019-08-06meta-author

76.2mm (3 Inch) Silicon Wafers

PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Dia Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Description PAM2266 25.4mm P B <111> >1000 20000um DSP FZ PAM2267 25.4mm P B <100> ANY 400um SSP Thickness is: 400+/-100um. PAM2268 25.4mm ANY <100> 500um SSP Wafers have particles. Wafers sold “As-Is”. PAM2269 25.4mm Undoped Undoped <111> >2000 280um SSP Intrinsic FZ PAM2270 25.4mm Undoped Undoped <100> >5000 73.5um DSP FZ, Float Zone PAM2271 25.4mm P B <100> .01-.05 500um DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2271 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, 1Flat, Soft cst PAM2272 Intrinsic Si:- [111] 1″ 280um P/E FZ [...]

2019-02-19meta-author

Annual Silicon Wafer Production

PAM XIAMEN offers Silicon wafers. We are often asked how many silicon wafers are produced annually. The answer depends on a more specific question including: What Diameter What Country or Entire World Semiconductor or Solar industries or both Monitor Grade, Test Grade, Prime Grade Above are just some terms that need [...]

2019-02-26meta-author

6″ FZ Prime Silicon Wafer

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2019-07-05meta-author

MGO MAGNESIUM OXIDE SINGLE CRYSTAL SUBSTRATE-1

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2019-03-14meta-author

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Float-Zone Mono-Crystalline Silicon

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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

980 Single Mode Laser Chip

980 Single Mode Laser Chip