980 Single Mode Laser Chip

980 Single Mode Laser Chip (PAM200827-LD)

PAM XIAMEN offers 980 Single Mode Laser Chip

	Powerwaywafer
980 Single mode laser chip property	Minimum	Typical	Maximum
Central Wavelength 969 974 979 nm	970	980	990
Output Power (mW)	300	400	500
Working Mode CW	—	—	—
Longitudinal mode Single	—	—	—
Spectrum Width	—	—	—
Emitter Width	—	—	—
Cavity Width (μm)	640	650	660
Cavity Length (μm)	4490	4500	4510
Cavity Thickness (μm)	115	125	135
Fast Axis Divergence(FWHM) 30 Deg	—	—	—
Slow Axis Divergence (FWHM) 14 Deg	—	—	—
Slope Efficiency 0.75 0.8 W/A	—	—	—

For more information, please contact us email at [email protected] and [email protected]

2020-09-16

Polycrystalline Back Sealed Polished Wafer

Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat. Si Wafer with back seal poly+SiO2 1. Polycrystalline Back Sealed Silicon Wafer Specification Parameter Unit PAM210305-SI　 Grade — Polycrystalline back sealed polished wafer General Characteristics — — Growth Method — CZ Diameter mm 200±0.2 Type — N Crystal Orientation — <100>±0.5 Dopant — AS Electrical Characteristics — — Resistivity Ω•cm 0.002-0.004 RRG [...]

2021-03-25meta-author

6″ FZ Prime Silicon Wafer

PAM XIAMEN offers 6″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 6″ {150.0±0.5mm}Ø×1,000±25µm, FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm, One-side-polished, Particles: <[email protected]≥0.3µm, back-side etched, One SEMI Flat (57.5mm), Edges: rounded, Sealed in Empak or equivalent cassette, BOW<30µm, MCCLifetime>1000µs. For more information, [...]

2019-07-05meta-author

PbTe single crystal substrate

PAM XIAMEN offers PbTe single crystal substrate.(Not sell it temporarily) Lead telluride (Phoebe) is a compound of lead and tellurium (PbTe); it is a narrow gap semiconductor. It occurs naturally as the mineral altaite. It is often alloyed with tin to make lead tin telluride, [...]

2019-05-14meta-author

Gallium Arsenide (GaAs) Substrate

PAM XIAMEN offers Gallium Arsenide substrate with various sizes and low density. The GaAs wafer with the conductivity of N type, P type, or semi-insulating is for sale. In addition, you can offer your own wafer design to customize. 1. Main Parameters of Gallium Arsenide Substrate MAIN [...]

2019-03-11meta-author

2018 TOP 100 US HIGHER EDUCATION R&D EXPENDITURES

2018 TOP 100 US HIGHER EDUCATION R&D EXPENDITURES post by PAM-XIAMEN date: Jan 03,2020 University is an important research and development subject in the innovation system. In all 912 US universities, PAM-XIAMEN has compiled the ranking data and the name by source of funds to list top [...]

2020-01-03meta-author

Nickel Substrate & Foil-1

PAM XIAMEN offers Nickel Single crystal. tomic number: 28 Atomic number: 28 Atomic mass: 58.71 g.mol -1 Atomic mass: 58.71 g.mol -1 Crystal structure: F.C.C Crystal structure: F.C.C Lattice Constant: 0.325 nm Lattice Constant: 0.325 nm Ni Single crystal Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished Ni Single Crystal Substrate, <100>, 10×10 x [...]

2019-05-13meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

980 Single Mode Laser Chip

980 Single Mode Laser Chip