980 Single Mode Laser Chip

980 Single Mode Laser Chip (PAM200827-LD)

PAM XIAMEN offers 980 Single Mode Laser Chip

	Powerwaywafer
980 Single mode laser chip property	Minimum	Typical	Maximum
Central Wavelength 969 974 979 nm	970	980	990
Output Power (mW)	300	400	500
Working Mode CW	—	—	—
Longitudinal mode Single	—	—	—
Spectrum Width	—	—	—
Emitter Width	—	—	—
Cavity Width (μm)	640	650	660
Cavity Length (μm)	4490	4500	4510
Cavity Thickness (μm)	115	125	135
Fast Axis Divergence(FWHM) 30 Deg	—	—	—
Slow Axis Divergence (FWHM) 14 Deg	—	—	—
Slope Efficiency 0.75 0.8 W/A	—	—	—

For more information, please contact us email at [email protected] and [email protected]

2020-09-16

1″ FZ Silicon Ingot with Diameter 25mm

PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm Silicon ingot, per SEMI, G Ø25mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at [email protected] and [email protected]

2020-04-26meta-author

Single crystal CdS window

PAM XIAMEN offers Single crystal CdS window. CdS (0001) 5 mm X 5 mm x 0.5 mm , 1 Sides polished CdS (0001) 5 mm X 5 mm x 0.5 mm , 2 Sides polished CdS (0001) 5 mm x 5 mm x1.0 mm, [...]

2019-04-19meta-author

Electronic scattering leads to anomalous thermal conductivity of n-type cubic silicon carbide in the high-temperature region

This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]

2020-02-11meta-author

4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm

PAM XIAMEN offers 4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 100 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , resistivity ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with the thickness 10nm/50nm For more information, send us email at [email protected] and [email protected]l.com

2021-03-16meta-author

MgF2 crystal

PAM XIAMEN offers MgF2 crystal. MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications Xtl Structure Lattice (A) Melting Point Density g/cm3 Hardness Thermal Expansion Refractive index Tetragonal a = 4.64 1255 oC 3.18 6 (mohs) 13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c ho 1.37740 　 c = 3.06 　　　　 he 1.38945 MgF2 [...]

2019-05-10meta-author

4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-4

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 5000 – 10000 [...]

2019-07-05meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

980 Single Mode Laser Chip

980 Single Mode Laser Chip