InAs heteroepitaxial layer grown on GaAs (100) substrate is very meaningful in the field of optoelectronics, especially in the field of infrared detectors and lasers. InAs has some potential characteristics, such as high electron mobility and narrow energy gap, and many metals can be [...]
2023-02-10meta-author
PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
The hetero epitaxial materials used to make quantum cascade laser (QCL) are mainly InP based GaInAs/AlInAs material system, GaAs based GaAs/AlGaAs material system and antimonide material system. PAM-XIAMEN can provide InP based quantum cascade lasers thin film, as follows:
1. InGaAs/InAlAs/InP for Quantum Cascade Laser Diode
PAM210906 [...]
2023-07-21meta-author
Diamond wafers from PAM-XIAMEN are wafer-scale products that are used to tap the huge potential of diamond materials, such as tribological testing, unique nano-scale processing applications and MEMS development. In the current diamond wafer market, there are three grade diamond wafer, Microelectronics Grade diamond wafer, Thermal [...]
2018-07-10meta-author
PAM-XIAMEN Offers GaAs LED epitaxy wafer, which is AlGaInP LED (Red LED) stack on GaAs substrate. Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4” is on mass production in 2010. This new product [...]
2018-05-14meta-author
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author