Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications
The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more [...]
What we provide:
Item
undoped N-
Si doped N+
Semi-insulating
P+
Freestanding GaN substrate
yes
yes
yes
GaN on sapphire
yes
yes
yes
yes
InGaN on sapphire
yes
***
AlN on sapphire
yes
LED wafer
(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)
Freestanding GaN substrate/GaN on sapphire/LED wafer:
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
http://www.qualitymaterial.net/products_7.html
InGaN on Sapphire:
For specification of InGaN on sapphire template, pleas view InGaN substrate:
https://www.powerwaywafer.com/InGaN-Substrates.html
AlN on [...]
2019-09-24meta-author
Gallium arsenide single crystal growth method of PAM-XIAMEN products is liquid-sealed straight pull method (LEC), vertical Bridgman method (VB), or vertical gradient solidification (VGF), which are current mainstream industrial growth methods. Here is a brief introduction for the GaAs single crystal growth method.
1. LEC for Gallium [...]
2021-06-22meta-author
Highly selective PEC etching of gallium nitride device structures
Photoelectrochemical (PEC) wet etching is an attractive wet etch approach for III-Nitride materials. Compared to dry etch techniques normally applied in prevalent GaN device fabrications, PEC wet etching can provide low damage, selective etching and understanding [...]
2013-03-05meta-author
2″ Free Standing Gallium Nitride (GaN) Substrate
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
2012-03-06meta-author
Fundamental issues of device-relevant low temperature GaAs and related materials properties
In the past few years, a flurry of activity has been devoted to the studies and device applications of non-stoichiometric GaAs grown by molecular beam epitaxy at the extremely low temperature (LT) of 250 [...]