PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
90
n- Si:P
41±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
18
n- Si:P
5±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
96
n- Si:P
30±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
21±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
16 ±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
20±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
135
n- Si:P
35±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
140
n- Si:P
31±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
38±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
25±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
150
n- Si:P
44±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
158
n- Si:P
67±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
8
n- Si:P
0.63±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
0.07±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
30
n- Si:P
6.75±10%
n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
75
n- Si:P
40±10%
n/n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
25
n- Si:P
2.5±10%
n/n/n+
For [...]
2019-03-08meta-author
Some news indicates that a high-tech company in a certain country has developed a new type of substrate material that matches the GaN lattice and can grow GaN well. (Note: It is very difficult to prepare GaN bulk single crystals, so the GaN mentioned [...]
2021-04-01meta-author
PAM XIAMEN offers silicon wafers that we have with a (211) orientation.
Item
Type/Dopant
Orient.
Dia.
Thick (μm)
Surf.
Res Ωcm
Comment
PAM3037
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
PAM3038
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
Prime, 1Flat, Empak cst
PAM3039
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ >50
Prime, 1Flat, Empak cst
PAM3040
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime, 1Flat, Empak [...]
2019-02-22meta-author
Gas filled prototype of a CdZnTe pixel detector
CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5–100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. [...]
2013-10-09meta-author
Top 10 Publication in in Microelectronics & Electronic Packaging by Citation
Post: PAM-XIAMEN, date: Jan 13,2020
PAM-XIAMEN has compiled top 10 the ranking data and the publication name in Microelectronics & Electronic Packaging by citation in impact factor(h5-index and h5 median, according to google scholar)
PAM-XIAMEN is [...]
2020-01-13meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs wafer, offers low-temperature grown gallium arsenide on GaAs substrate wafer. Our LT-GaAs epi layer has excellent properties, GaAs films with LT-GaAs layers were grown by molecular beam epitaxy (MBE) method at a low temperature substrate. The grown structures were [...]
2017-08-30meta-author