PAM-XIAMEN offers p type electronic grade Germanium (Ge) wafer. Germanium is a chemical element. Its chemical symbol is Ge. Its atomic number is 32 and the atomic weight is 72.64, belonging to the IVA group elements. So the germanium electron configuration must have 32 [...]
2019-03-15meta-author
PAM XIAMEN offers Aluminium Crystal & Substrates (single crystal).
Aluminium Single Crystal Boule Grown by Bridgemen method.
Aluminum Single Crystal Substrate: <100>, 2″ Dia. x1.0 mm, 1 side polished
Aluminum Single Crystal Substrate: <100>, 10x10x0.5 mm, 1 side polished
Aluminum Single Crystal Substrate: <100>, [...]
2019-05-08meta-author
AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author
Why are the wafers provided by PAM-XIAMEN round? Because the manufacturing process determines that it is round. Take the production process of silicon wafers as an example: The purified high-purity polysilicon is spin-grown on a seed. After the polycrystalline silicon is melted, put it [...]
2022-05-26meta-author
PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer
4H-SiC single crystal has excellent characteristics such as wide bandgap, high carrier mobility, high thermal conductivity, and good stability. It has broad application prospects in high-power electronics, radio frequency/microwave electronics, and quantum information. [...]
2024-03-15meta-author
PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html.
Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, [...]
2024-04-11meta-author