Advantech Wireless releases GaN whitepaper
The paper explores the technology and benefits of incorporating GaN into a line of high power amplifiers.
Energy efficiency and going “Green” is very important throughout the world. The Advantech Wireless whitepaper identifies and explains how it is possible to achieve significant reductions in energy consumption, space and weight while maintaining linearity and significant output power.
The introduction of GaN High Electron Mobility Transistors (HEMT) in early 2000 has left an undeniable mark on the entire satellite communication landscape.
“It is now possible for the first time since the introduction of the Solid State Microwave Technology to design and manufacture Power Amplifiers that exceed by several orders of magnitude the reliability, linearity, power density and energy efficiency of all existing technologies, being GaAs, LDMOS, or TWT” states Cristi Damian, VP Product Line Management and Business Development at Advantech Wireless.
Over the past 6 years, Advantech Wireless has developed a full line of GaN based SSPAs and BUCs/SSPBs (Block Up Converter integrated with SSPA). The product line was launched at Satellite 2010 in Washington, included up to 200W Ku-band offering, the first product line worldwide.
Since then, major deployments in both the commercial and military markets have been taken place with thousands of devices now operating in the field. GaN is a mature, stable and high reliability technology with low OPEX.