PAM XIAMEN offers 850nm laser diode wafers.
850nm SLD structures
P+ GaAs P>5E19,d=0.15um
P- AlGaAs and undoped AlGaAs d~1.4um
Undoped GaAsP or AlGaInAs active layer,PL:850+-15nm
Undoped AlGaAs and N- AlGaAs,d~1.5um
N GaAs buffer
N GaAs substrate N=(0.4~4)×10^18d=350~625um(100)2° off
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found [...]
2019-03-13meta-author
PAM-XIAMEN offers GaN on Si HEMT wafer for Power, D-mode. Because of the heterojunction structure of GaN and AlGaN, the GaN HEMT on Si Substrate structure has one important property of high electron mobility. The HEMT Si wafers can be for device fabrication as well as [...]
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Three decorative LED luminaires from Acuity Brands were selected to receive a 2016 Lighting for Tomorrow (LFT) award. The annual competition was created in 2002 to recognize the best decorative, energy-efficient luminaires in the market, and is organized by the American Lighting Association, the Consortium for Energy Efficiency [...]
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FWHM and XRD report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
2018-08-14meta-author
We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then [...]
PAM-XIAMEN offers GaN on silicon HEMT wafer for Power, E-mode. Because the normally-on characteristic will Increase the complexity of circuit design and power consumption, designing an enhanced (E-Mode) HEMT that is turned off under zero grid bias will be crucial for advancing the application of GaN-on-Silicon HEMT in [...]
2019-05-17meta-author