PAM XIAMEN offers Silicon Wafer Thickness:275+- 25µm.
Silicon Wafer ,2in Si Wafer,P/Boron <111> ON +-1°,
0.01-0.02 Ohm-cm ,275+- 25µm Thickness,SSP,
PRIME -Si Wafers,Single SidePolished/Etched Back,
Primary Semi Std Flat,
Surface Roughness <1nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-08-22meta-author
PAM XIAMEN offers TiO2 Coated Sodalime Glass.
TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm
TiO2 Coated Sodalime Glass
Dimension: 1″ x1″x 0.7mm
Polish: both sides are optically clear
Nominal TiO2 film thickness: 150 nm +/- 10%
For more information, please visit our website: [...]
2019-04-29meta-author
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]
PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.
1. CZT Compton Imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
22.0×22.0 mm2
Thickness
15.0mm
Pixel size
1.38×1.38 mm2
Pixel center space
1.88mm
Pixel array
11×11
Electrode material
Au
Operation temperature
25℃-+40℃
Energy range
60KeV~2.6MeV
Energy resolution(22℃)
Average pixel <5%@662KeV
Storage temperture
10℃~40℃
Storage humidity
20%-80%
2. Spectrum of CZT Compton Imager
3. Features Compton Imaging Detector Based on CZT Crystal
Long-time stability
High energy [...]
2019-04-24meta-author
PAM XIAMEN offers GaN on Sapphire for Power.
1.1 GaN HEMT Structure on Sapphire for Power Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
~arc.sec
XRD(002)FWHM
~arc.sec
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
Al composition
20-30%
In composition
17% for InAlN
GaN cap
/
AlGaN/(In)AlN barrier
/
AlN interlayer
/
GaN channel
/
C [...]
2019-05-17meta-author
PAM XIAMEN offers PbS single crystal.
The sulfate ion is a polyatomic anion with the empirical formula SO2−4 and a molecular mass of 96.06 daltons (96.06 g/mol); it consists of a central sulfur atom surrounded by four equivalent oxygen atoms in a tetrahedral arrangement. [...]
2019-05-14meta-author