GaN on Sapphire for Power

PAM XIAMEN offers GaN on Sapphire for Power.

1.1 GaN HEMT Structure on Sapphire for Power Application

Wafer size 2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure Refer 1.2
Carrier density 6E12~2E13 cm2
Hall mobility /
XRD(102)FWHM ~arc.sec
XRD(002)FWHM ~arc.sec
Sheet Resistivity /
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=35um
Edge exclusion  <2mm
SiN passivation layer  0~30nm
Al composition 20-30%
In composition 17% for InAlN
GaN cap /
AlGaN/(In)AlN barrier /
AlN interlayer /
GaN channel /
C doped GaN buffer /
Nudeation /
Substrate material Sapphire substrate


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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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