PAM-XIAMEN has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems.
The GaAs-pHEMT is widely used for high [...]
2012-05-11meta-author
PAM XIAMEN offers3″ Silicon Wafer-15
3″ Si wafer(32825), R≤200Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: P/type boron
3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> direction
5. Resistivity: ≤150Ωcm
6. Primary surface: semi std
7. Secondary surface: none
8. Thickness: 380±25μm
9. Overall thickness variation on the plate is [...]
2019-11-13meta-author
A 3-inch GaAs epitaxial wafer can be provided for making a PIN diode chip, which can make a power electronic device with high isolation and low insertion loss. A heterojunction AlGaAs/GaAs PIN wafer makes the diode with low RF on-state resistance suitable for fabricating various [...]
2021-11-02meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.
1. Specification of Prime Silicon Wafer by FZ
PRIME WAFERS SILICIUM FZ
DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
DSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE [...]
2019-07-04meta-author
MESFET (Metal-Semiconductor Field Effect Transistor) is a field-effect transistor composed of Schottky barrier gates. SiC microwave MESFET was developed between 1995 and 2002 to replace GaAs microwave field effect transistors (FETs). There are three types of substrate materials used conductive substrate (n+- SiC), high-purity semi insulating substrate [...]
2023-11-24meta-author
PAM XIAMEN offers LaAlO3 Single Crystal Substrat
Lanthanum aluminate (LaAlO3) single crystal substrate is the large-scale high-temperature superconducting film,which has good match with YBaCuO and other high temperature superconductor materials and lattice, low dielectric constant and small microwave loss, so LaAlO3 substrate is suitable for [...]
2019-05-07meta-author