PAM-XIAMEN has announced 6″GaAs epi wafer on mass production

PAM-XIAMEN has announced 6″GaAs epi wafer on mass production

PAM-XIAMEN  has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems.

The GaAs-pHEMT is widely used for high frequency
switching devices in wireless systems like cellular phones,W-LANs, GPS, etc. The new generations of cell phone of3G, 3.5G contain multiple transceivers with different modulation formats, so the pHEMT switch ICs in the RF path must connect to a large number of nodes (e.g., SP9T or more). This trend drives an increasing complexity of the pHEMT switch ICs in these phones, and requires improvements in surface cleanliness and defect reduction in the pHEMT epi wafers in order to maintain high IC yields.

As report,GaAs epi wafer area to grow at 6% CAAGR over 2010-2015. As mobile handsets and network infrastructure become more sophisticated, gallium arsenide device usage in these applications is increasing, driving growth in the consumption of GaAs epi wafers. Commercial applications resulted in demand for semi-insulating  GaAs epi wafers growing by more than 30% to slightly more than 29600 ksi (kilo square inches) in 2010, according to the Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) Forecast and Outlook ‘Markets for SI GaAs Epitaxial wafers: 2010-2015’.

Growth in Gallium arsenide devices will lead to a compounded average annual growth rate (CAAGR) of 6% over 2010-2015 to more than 40,200 ksi. However, falling prices will limit the growth in total market value to a CAAGR of 1%, to revenue of $543m in 2015.

The market research firm forecasts that 6-inch GaAs epi wafer will be the most prevalent, accounting for slightly more than 80% of total device demand over the forecast period. With cost-sensitive, high-volume markets dominating demand for GaAs devices, the report forecasts a CAAGR of 9% for 6-inch GaAs epi substrates.

“Strong growth in the overall GaAs device market in 2010 propelled the GaAs epitaxial substrate market to solid gains,” notes Eric Higham, director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. “The GaAs substrate market is tied closely to wireless communications and Strategy Analytics anticipates continued growth in these areas,” he adds.


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