News

Progress in Research on the Generation of Mid Infrared Femtosecond Lasers from Silicon Carbide Crystal

PAM-XIAMEN can supply SiC crystals, more specifications are found in  https://www.powerwaywafer.com/sicsilicon-carbide-boule-crystal.html. Mid infrared laser (3-5μm) has important applications in environmental monitoring, gas molecule recognition, coherent tomography, and other fields. Especially in recent years in the research of generating single attosecond pulses from high-order harmonics, due to the fact that periodic level mid [...]

2024-04-26 Read more...

Progress in the TSSG Growth of Wafer Scale 3C-SiC Single Crystals

Single crystal 3C-SiC substrate can be supplied with specifications as: https://www.powerwaywafer.com/3c-sic-wafer.html. Silicon carbide (SiC) has excellent properties such as wide bandgap, high breakdown field strength, high saturation electron drift rate, and high thermal conductivity, and has important applications in fields such as new energy vehicles, photovoltaics, and 5G communication. Compared with [...]

2024-04-26 Read more...

Study on the Effect of Hot Annealing on the Properties of ScxAl1-xN Thin Films

AlN thin film, as a piezoelectric material with a wurtzite structure, has attracted much attention due to its excellent performance. However, compared with other piezoelectric materials such as Pb (ZrxTi1-x) O3 (lead zirconate titanate, PZT), pure AlN thin films exhibit poorer piezoelectric response. Doping another element in AlN is [...]

2024-04-24 Read more...

Theoretical Study on Near Surface Vacancies in 3C-SiC

Silicon carbide (SiC) is a hot research material in the field of quantum information technology. For example, defect vacancies in SiC (composed of silicon vacancies and adjacent carbon vacancies, hereinafter referred to as VV) have many advantages of NV centers in diamond, including triple ground states and the advantage [...]

2024-04-23 Read more...

Study on A General Method for Polishing SiC Wafers to Atomic Level Flatness

Silicon carbide (SiC) is crucial for the growth of graphene as a substrate material for epitaxial graphene. PAM-XIAMEN can offer SiC substrate for graphene growth, specification as https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Graphene grown on different crystal planes of SiC has different electronic properties. Therefore, selecting SiC substrates with different crystal planes to grow [...]

2024-04-22 Read more...

Research on Compensation Effect in Al Doped P-Type 4H-SiC By PVT

PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal forms of SiC, 4H-SiC has [...]

2024-04-19 Read more...

Study on AlN Single Crystal Grown on AlN Seed Crystal

Single crystal AlN substrate can be provided with specifications as found in https://www.powerwaywafer.com/aln-substrate.html. AlN single crystal is the direct bandgap semiconductor material with the largest bandgap width (6.2 eV), which has excellent characteristics such as extremely high breakdown field strength, excellent thermal conductivity, stable physical and chemical properties. Moreover, AlN single [...]

2024-04-18 Read more...

4H-SiC PVT Growth: Achieving Crystal Structure Growth Stability

PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field structure, and the parameters are [...]

2024-04-17 Read more...

Effect of Nitrogen Doping on Czochralski Monocrystalline Silicon

PAM-XIAMEN is able to supply nitrogen (N) doped silicon wafers, specifications please refer to: https://www.powerwaywafer.com/silicon-wafer. The doping of nitrogen as an impurity into silicon crystals not only has a beneficial effect on the performance of silicon wafers, but also has an important impact on the physical and electrical properties of silicon [...]

2024-04-16 Read more...

Study on Dopants and Compensation of AlN

PAM-XIAMEN can supply AlN single crystal substrate, additional specification please refer to https://www.powerwaywafer.com/aln-substrate.html. The main n-type AlN candidate dopants are oxygen (O) and silicon (Si), while for p-type AlN, they are magnesium (Mg) and beryllium (Be). So far, the success rate of Mg and O doping has been very low. [...]

2024-04-15 Read more...