Charge Sensitive Pre-amplifier

Charge Sensitive Pre-amplifier

PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.

Specification

Power Consumption	<0.43W
Power	±12V
Output Resistance	50 Ω
Equivalent Noise	ENC: 130e–
Working temperature	-20℃-+40℃
Falling edge time	250 ~ 400us
Input charge range	<1000fc
Gain	G=10mv/fc
Dimension	100×76×44mm3
Weight	265g

Spectrum

Features
Portable, user friendly
High sensitivity
Flexible interface
Low noise

For more information, please send us email at [email protected]

2019-04-25

PET film

PAM XIAMEN offers PET film. PET Film with protective film ,200mm×300mmx Minimum thickness-200um PET Film with protective film Size:,200mm×300mm Minimum thickness: -200um For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]

2019-05-14meta-author

Si wafer Thickness: 675 ± 25 um

PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um. Si wafer Method: Cz Orientation: <111> Type: P-Type Dopant: Boron Resistivity: 0.1-13 ohm.cm Diameter: 150 ± 0.1 mm Thickness: 675 ± 25 um Chamfer Front side: Epi-ready Back side: etched BOW < 30um Warp [...]

2019-08-22meta-author

Properties of InGaN blue laser diodes grown on bulk GaN substrates

Properties of InGaN blue laser diodes grown on bulk GaN substrates High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]

2013-03-06meta-author GaN substrate

Room-temperature direct bonding of germanium wafers by surface-activated bonding method

This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]

2018-11-12meta-author

650nm laser diode wafers

PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]

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4″ Silicon Ignot

PAM XIAMEN offers 4″ silicon ignot. Silicon ingot, per SEMI, G 100.7±0.3mmØ, p-type Si:B[100]±2.0°, Ro=(0.001-0.003)Ohmcm, Ground Ingot, NO Flats, NOTE: visual rings of dopant on front and back side ARE NOT allowed For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-07-02meta-author

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[email protected] [email protected]

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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

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Charge Sensitive Pre-amplifier

Charge Sensitive Pre-amplifier

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