PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented polycrystalline)/Cr [...]
2019-04-16meta-author
PAM XIAMEN offers 2″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 P Boron CZ -100 1-20 140-160 P/P PRIME 50.8 P Boron FZ -100 >1000 200-500 P/P PRIME 50.8 P Boron FZ -100 >3000 225-275 P/P PRIME 50.8 P Boron CZ -100 1-20 225-275 P/P PRIME 50.8 P Boron CZ -100 .001-.005 250-300 P/E PRIME 50.8 P Boron CZ -100 .005-.02 250-300 P/E PRIME 50.8 P Boron FZ -100 >3000 250-300 P/E PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/DTOx PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/Ni PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/OX PRIME 50.8 P Boron CZ -100 1-20 250-300 P/E/WTOx 50.8 P Boron CZ -100 .001-.005 275-325 P/E PRIME 50.8 P Boron CZ -100 450-500 P/P PRIME 50.8 P Boron FZ -100 4000-10000 475-525 P/P PRIME 50.8 P Boron CZ -100 1-20 500-550 P/E PRIME 50.8 P Boron CZ -100 1-20 950-1000 P/P PRIME 50.8 P Boron CZ -100 1-20 1000-1050 P/E PRIME 50.8 P Boron CZ -111 1-20 225-275 P/P PRIME 50.8 P Boron CZ -111 1-20 250-300 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
2019-05-14meta-author
PAM XIAMEN offers SrLaAlO4 crystal. SrLaAlO4 crystal is a promising substrate material for high Tc superconduct film and other oxide films to replace SrTiO3 crystal with better quality and lower cost. We produces SrLaAlO4 crystal and substrate in house up to 35 mm. We [...]
2019-05-14meta-author
Korea’s LED Industry Developments Korea’s LED industry took off at a much later date than Japan or Taiwan, in fact it developed at around the same time as China, but has advanced at an accelerated rate. However, the country’s LED industry plummeted much sharply compared to Japan, [...]
2016-09-18meta-author
PAM XIAMEN offers Titanium Oxide TiO2 Crystal Substrates. Main Parameters Crystal structure Tetragonal, Rutile Unit cell constant a=4.5936Å c=2.9582 Å Density 4.26 (g/cm3) Melting point 1870 ℃ Dielectric constants dη/dT: a: -0.72×10^-6/k, c: -0.42×10^-6/k Linear expansion coefficient 7.14 x 10-6 /℃ along a axis 9.19 x 10-6 /℃ along c axis Hardness 7 (mohs) Polishing Single or double side polished Size 5×5×10mm, 5×10×10mm, 10×10×0.5mm, other [...]
2019-03-15meta-author
