5-6-4-1 SiC High-Power Rectifiers
The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
2018-06-28meta-author
2-7.Primary Flat Orientation
The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
2018-06-28meta-author
5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates
Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
2018-06-28meta-author
Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]
2018-06-28meta-author
2-35.Prime Grade
Prime Grade:The highest grade of a silicon carbide wafer. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Prime Wafers”.
2018-06-28meta-author
3-1. Large Point Defects
Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
2018-06-28meta-author