PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
765
P/P
FZ ~100
SEMI Prime, TTV<3μm
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
795
E/E
FZ >100
SEMI, in Empak, TTV<4μm, Lifetime>2,000μs
Intrinsic Si:-
[110]
4″
500
P/P
FZ >20,000
SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary
Intrinsic Si:-
[110] ±0.5°
4″
500
P/E
FZ >15,000
Prime
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<1μm
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<2μm, Groups of 5 wafers
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, [...]
2019-03-05meta-author
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]
2019-08-19meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
2 inch in diameter wafers
Monocrystalline silicon with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 microns,
Warping <35 microns
For more information, please visit our website: [...]
2019-07-01meta-author
Polarization degree and vector angle effects on a CdZnTe focal plane performance
To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining [...]
SWIR (short wave infrared) detector is widely used in aerospace remote sensing, low-light night vision, medical diagnosis, agricultural industry, security monitoring and other fields. The short-wave infrared InGaAs detector has the characteristics of high detection rate, high uniformity and high stability, and is one [...]
2022-04-02meta-author
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods and substrate, which can interfere with light emission and extraction. Here we [...]