PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer | Material | Thickness | Notes |
Layer 7 | AlAs | – | |
Layer 6 | GaAs | – | |
Layer 5 | AlAs | – | |
Layer 4 | AlGaAs | 150 nm | Emitting at 785nm |
Layer 3 | AlAs | – | |
Layer 2 | AlGaAs | – | Emitting at 700 nm |
Layer 1 | AlAs | – | |
Substrate: | GaAs |
No. 2 GaAs-based InAlP / AlGaAs Epitaxial Structure PAM200420-LD
Layer | Material | Thickness | Notes |
Layer 7 | InAlP | – | |
Layer 6 | GaAs | – | |
Layer 5 | InAlP | – | |
Layer 4 | AlGaAs | – | Emitting at 785nm |
Layer 3 | InAlP | – | |
Layer 2 | AlGaAs | – | Emitting at 700 nm |
Layer 1 | InAlP | 1500 nm | |
Substrate: | GaAs |
No.3 LD Structure on GaAs Susbtrate
785nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaAs and undoped AlGaAs d~1.5μm
Undoped AlGaInAs QW PL:770+-5nm
Undoped AlGaAs and N- AlGaAs , d~1.5μm
N GaAs buffer
N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 15°off <111>A
2. FAQ 785nm Laser Diode Wafers