PAM XIAMEN offers PET film.
PET Film with protective film ,200mm×300mmx Minimum thickness-200um
PET Film with protective film
Size:,200mm×300mm
Minimum thickness: -200um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-05-14meta-author
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27meta-author
PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
675
P/E
1-100
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
800
E/E
1-50
SEMI, 1Flat (57.5mm), TTV<5μm
p-type Si:B
[100]
6″
320
P/E
0.001-0.030
JEIDA Prime
p-type Si:B
[100]
6″
675
P/P
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
675
P/E
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[111-4.0°] ±0.5°
6″
625
P/E
4-15 {7.1-8.8}
SEMI Prime, 1 JEIDA Flat(47.5mm)
p-type Si:B
[111] ±0.5°
6″
675
E/E
0.010-0.025
SEMI, 1Flat (57.5mm)
n-type Si:P
[100]
6″
925 ±15
E/E
5-35 {12.5-29.7}
JEIDA Prime, TTV<5μm
n-type Si:P
[100]
6″
675
P/E
2.7-4.0
SEMI Prime
n-type Si:P
[100]
6″
250 ±5
P/P
1-3
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers silicon wafers
Silicon Wafer Mobility Calculator
Indium Tim Oxide (ITO) – Float Zone Silicon – LiNbO3 – InGaAs – Nitride on Silicon – Aluminum – Silicon Carbide (SiC) – GaN on Sapphire
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-02-25meta-author