2″ Silicon Wafer-1

PAM XIAMEN offers 2″ Silicon Wafer.

Diameter
(mm)
Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
50.8 N Phos FZ (111) Off 2″ Towards (110) 2k-5k 350-400 P/E PRIME
50.8 N Phos CZ -100 1-20 10-30 P/P PRIME
50.8 N Phos CZ -100 1-20 40-60 P/P PRIME
50.8 N Phos CZ -100 1-20 80-100 P/P PRIME
50.8 N Phos CZ -100 1-20 140-160 P/P PRIME
50.8 N Phos FZ -100 >1000 200-500 P/E PRIME
50.8 N Phos FZ -100 >1000 200-500 P/P PRIME
50.8 N Phos CZ -100 225-275 P/P PRIME
50.8 N Phos FZ -100 >3000 225-275 P/P PRIME
50.8 N As CZ -100 .001-.005 250-300 P/E PRIME
50.8 N Sb CZ -100 .005-.02 250-300 P/P PRIME
50.8 N Phos FZ -100 >3000 250-300 P/E PRIME
50.8 N Phos CZ -100 1-20 250-300 P/E PRIME
50.8 N Phos CZ -100 1-20 250-300 P/E/DTOx PRIME
50.8 N Phos CZ -100 1-20 250-300 P/E/Ni PRIME
50.8 N Phos CZ -100 1-20 250-300 P/E/WTOx
50.8 N Phos FZ -100 2000-5000 275-325 P/P PRIME
50.8 N Phos CZ -100 450-500 P/P PRIME
50.8 N Phos CZ -100 43485 500-550 P/E PRIME
50.8 N Phos CZ -100 1000-1050 P/E PRIME
50.8 N Phos CZ -100 1-20 2900-3100 P/E PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.
PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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