Silicon carbide has a chemical formula of SiC and a molecular weight of 40.1. Although the chemical formula is simple, it has a wide range of applications, which is determined by the silicon carbide polytypes. Structure={components, relationship between components} Silicon carbide is a simple substance, and the components are carbon [...]

2021-04-26meta-author

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 4″ 1000 P/E 1-10 SEMI Prime n-type Si:Sb [111-4°] 4″ 450 P/E 0.025-0.045 SEMI Prime n-type Si:Sb [111-2.5°] 4″ 625 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [111] 4″ 525 P/E 0.016-0.020 SEMI Prime n-type Si:Sb [111-4°] 4″ 525 P/E 0.010-0.020 SEMI Prime n-type Si:Sb [111-2°] 4″ 380 P/E 0.008-0.018 SEMI Prime n-type Si:Sb [111-3°] 4″ 400 P/E 0.008-0.018 SEMI Prime n-type Si:Sb [111-3°] 4″ 400 P/E 0.005-0.018 SEMI Prime n-type Si:As [111-3°] 4″ 400 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-3°] 4″ 400 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-2.5°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-3°] 4″ 525 P/E 0.001-0.005 SEMI Prime Intrinsic Si:- [100] 4″ 525 P/E 400-1,000 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us [...]

2019-03-06meta-author

By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction. Field effect transistor Type Name Principle FET JFET Junction PN junction MOSFET Metal oxide semiconductor MESFET Metal semiconductor Schottky junction MODFET Modulation doping HEMT High electron mobility In fact, a Schottky junction can be realized through another structure. Definitions of Junctions Starting from [...]

2021-04-02meta-author

PAM-XIAMEN has silicon boule for sale, which is a raw material for semiconductor silicon device manufacturing, making high-power rectifiers, high-power transistors, diodes, switching devices, and etc. The monocrystalline silicon crystal with a basically complete lattice structure has a band gap of 1.11eV. Single crystalline silicon with different [...]

2021-07-05meta-author

PAM XIAMEN offers Float Zone Silicon Wafers, they use FZ Silicon substrates instead of Czochralski grown silicon. Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications. 1. Specifications [...]

2019-02-14meta-author

PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2434 p–type Si:B [110] ±0.25° 4″ 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst PAM2435 p–type Si:B [110] ±0.5° 4″ 380 P/P 1–30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst PAM2436 p–type Si:B [110] ±0.5° 4″ 750 P/E 1–100 SEMI Prime (back–side [...]

2019-02-19meta-author