PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]
PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375±25μm. 3″ Si wafer Diameter: 76.2 +/- 0,1 mm Thickness: 375±25μm Orientation: <111> Dopant: p-type/Boron Resistivity<0.005Ωcm Front side polished Back side: frosted SEMI standard For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] [...]
As reported by Esia(European Semiconductor Industry Association), in January worldwide sales of semiconductors amounted to US$ 26.880 billion. These results are in line with seasonal patterns – as the first months of the year are usually slower for semiconductors – and represent a 2.7% [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm 6″Ø ingot p-type Si:B[100], Ro: 1-10 Ohmcm, (1 ingot: 21mm) 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 188mm) 6″Ø ingot p-type Si:B[100], [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-3 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers GaAs (100) undoped crystal . GaAs, 10×5,10×10 GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×3 x0.5 mm, 2SP GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×5 x0.5 mm, 2SP GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, GaAs [...]
