PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers YVO4 Undoped Yttrium Orthovanadate Crystals. UNDOPED YVO4 IS AN EXCELLENT NEWLY DEVELOPED BIREFRINGENCE OPTICAL CRYSTAL. It has very good transmission in a wide wavelength range from visible to infrared. It has large index of refractivity and birefringence difference. Compared with other important birefringence crystals, YVO4 has higher. [...]
P-type silicon carbide substrate is generally used to make power devices, such as insulated gate bipolar transistors (IGBT, Insulate-Gate Bipolar Transistor). IGBT= MOSFET+BJT, it is a non-on or off switch. MOSFET=IGFET (Metal Oxide Semiconductor Field Effect Transistor, or Insulated Gate Field Effect Transistor). BJT (Bipolar [...]
PAM XIAMEN offers 8″ Silicon Wafer 8″ Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Chamfer width 700-1000 μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
(Al,In)GaN laser diodes with optimized ridge structures We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]
Single crystal KTaNbO3 is available from PAM-XIAMEN. Potassium tantalum niobate (KTa1-xNbxO3; KTN for short) crystal is a kind of multifunctional crystal material with high electro-optical coefficient, good piezoelectric and pyroelectric effects. It has significant electro-optical and photorefractive effects. The KTaNbO3 crystal is generally grown [...]
PAM XIAMEN offers nitride coated silicon wafers. Stoichiometric LPCVD Nitride on Silicon Wafer Specification Thickness range: 100Å – 4500Å Sides processed: Both Refractive index: 2.00 +/-.05 @632nm Film stress: >800MPa Tensile Stress Wafer size: 1″ -12″inches Temperature: 800C° Gases: Dichlorosilane, Ammonia Equipment: Horizontal vacuum furnace Nitride LPCVD PECVD [...]
