The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of [...]
2022-08-16meta-author
PAM XIAMEN offers Silicon Wafers.
Our clients often use the following silicon wafers for the above applications:
Si 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, [...]
2019-02-26meta-author
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author
808nm laser diode wafer is offered by PAM-XIAMEN on N-type GaAs substrate. According to the material used in the active area, the LD wafer is mainly divided into two kinds with aluminum and without aluminum. More details please see below:
1. Laser Diode Wafer Specs
No. 1 808nm Epi Wafer [...]
2019-03-13meta-author
PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
6inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 152.4mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at [email protected] and [email protected]
2021-03-17meta-author
Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]
2022-06-06meta-author