PAM XIAMEN offers YVO4 Undoped Yttrium Orthovanadate Crystals.
UNDOPED YVO4 IS AN EXCELLENT NEWLY DEVELOPED BIREFRINGENCE OPTICAL CRYSTAL.
It has very good transmission in a wide wavelength range from visible to infrared.
It has large index of refractivity and birefringence difference.
Compared with other important birefringence crystals, YVO4 has higher. [...]
2019-03-18meta-author
P-type silicon carbide substrate is generally used to make power devices, such as insulated gate bipolar transistors (IGBT, Insulate-Gate Bipolar Transistor).
IGBT= MOSFET+BJT, it is a non-on or off switch. MOSFET=IGFET (Metal Oxide Semiconductor Field Effect Transistor, or Insulated Gate Field Effect Transistor). BJT (Bipolar [...]
2021-04-08meta-author
PAM XIAMEN offers 8″ Silicon Wafer
8″ Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Chamfer width 700-1000 μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-09-03meta-author
(Al,In)GaN laser diodes with optimized ridge structures
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]
2013-03-27meta-author
Single crystal KTaNbO3 is available from PAM-XIAMEN. Potassium tantalum niobate (KTa1-xNbxO3; KTN for short) crystal is a kind of multifunctional crystal material with high electro-optical coefficient, good piezoelectric and pyroelectric effects. It has significant electro-optical and photorefractive effects. The KTaNbO3 crystal is generally grown [...]
2019-05-07meta-author
PAM XIAMEN offers nitride coated silicon wafers.
Stoichiometric LPCVD Nitride on Silicon Wafer Specification
Thickness range: 100Å – 4500Å
Sides processed: Both
Refractive index: 2.00 +/-.05 @632nm
Film stress: >800MPa Tensile Stress
Wafer size: 1″ -12″inches
Temperature: 800C°
Gases: Dichlorosilane, Ammonia
Equipment: Horizontal vacuum furnace
Nitride
LPCVD
PECVD
[...]
2019-02-11meta-author