PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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100mm Silicon Carbide Below specification of 100mm silicon carbide in our company are available: Specificationsof Silicon Carbide N-type 100mm Diameter – Specificationsof Silicon Carbide N-type 100mm Diameter – polytype 4H-SiC A type N-type SiC substrate Resistance 0.015 – 0.028 ohm * cm surface orientation Off-Axis-misorientation: 4.0˚ towards [11-20] ± 0.5˚ Diameter 100.0 mm + 0.0 / -0.5 [...]
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron [...]
A comparative study of the bonding energy in adhesive wafer bonding Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]
FWHM and XRD report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
PAM XIAMEN offers Single crystal LiGaO2. LiGaO2 (001 ) 10x10x0.35mm, 2sp, with domain LiGaO2 (001 ) 10x10x0.5mm, 1sp, with domain” LiGaO2 (001 ) 10x10x0.5mm, 2sp LiGaO2 (010 ) 10x10x0.5mm, 1sp,with doman LiGaO2 (010 ) 10x10x0.5mm, 2sp LiGaO2 (100 ) 10x10x0.5mm, 1sp, LiGaO2 (100 ) [...]
The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and [...]
