III-nitrides are mainly composed of InN-GaN-AlN and its alloys, of which InGaN is the most important and widely used. InGaN is unstable and easy to decompose at high temperature. The separated phase InN can form small clusters with three-dimensional quantum confinement, which strengthens the [...]
2023-02-16meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI Prime
p-type Si:B
[100]
3″
350
P/E/P
0.100-0.200
SEMI Prime
p-type Si:B
[100]
3″
400
P/P
0.015-0.016
SEMI Prime
p-type Si:B
[100]
3″
380
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
0.003-0.004
SEMI Prime
p-type Si:B
[100]
3″
100
P/P
0.0026-0.0030
SEMI Prime
p-type Si:B
[100]
3″
300
P/E
0.002-0.003
SEMI Prime
p-type Si:B
[100]
3″
525
P/E
0.0020-0.0027
SF @ 45°
p-type Si:B
[100]
3″
380
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[911]
3″
380
P/E
5-6
PF <110>
p-type Si:B
[111]
3″
380
P/E
18-21
SEMI Prime
p-type Si:B
[111]
3″
775
P/E
13-14
Prime, NO Flatst
p-type Si:B
[111]
3″
1000
P/E
10-20
Prime, NO Flatst
p-type Si:B
[111-4°]
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111]
3″
2000
P/P
8-9
SEMI Prime, Individual cst
p-type Si:B
[111]
3″
625
P/P
5-8
SEMI Prime
p-type Si:B
[111]
3″
2300
P/P
4-7
SEMI Prime, Individual [...]
2019-03-06meta-author
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates
Structural properties of GaN films grown on vicinal sapphire (0001) substrates with various vicinal angles by plasma-assisted molecular beam epitaxy are investigated. High-resolution x-ray diffraction (HRXRD) results reveal the dramatic [...]
2013-05-13meta-author
Abstract
The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
2017-06-14meta-author
PAM XIAMEN offers Zero Diffraction Plate.
SiO2 Single Crystal Zero Diffraction Plate for XRD
Desktop X-Ray Orientation Machine for Single Crystal Orientation Measurement
Zero Diffraction Plate for XRD sample: 30 x 30 x 2.5 mm with Cavity 10 ID x 1.0 mm, 2sp, SiO2 [...]
2019-05-22meta-author
PAM-P01(CZT Planar Detector) series are developed from CZT planar detector. Benefit from advanced CZT technology, we has developed CZT planar detectors with energy resolution<7% or 7%~10% @59.5keV under 25deg. for dose counting, spectrum acquisition and imaging for dosimeter, spectrometer and nuclear medicine.
CZT planar detector
1. [...]
2019-04-23meta-author