PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of [...]
PAM XIAMEN offers Silicon Wafers. Our clients often use the following silicon wafers for the above applications: Si 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade PDMS micro-fluidic chip platforms for micro-organoid cell culture applications. Microfluidic platform Characterization Definition of a microfluidic platform A microfluidic platform provides a set of fluidic unit operations, [...]
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
808nm laser diode wafer is offered by PAM-XIAMEN on N-type GaAs substrate. According to the material used in the active area, the LD wafer is mainly divided into two kinds with aluminum and without aluminum. More details please see below: 1. Laser Diode Wafer Specs No. 1 808nm Epi Wafer [...]
PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm 6inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 152.4mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished Back side: lapped-etched For more information, send us email at [email protected] and [email protected]
Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]
