80+1mm FZ Si Ingot-1

PAM XIAMEN offers 80+1mm FZ Si Ingot-1

FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

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P Type Indium Phosphide Semiconductor Substrate

Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]

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Aluminium Gallium Arsenide Epi Wafer

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

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80+1mm FZ Si Ingot-1

80+1mm FZ Si Ingot-1

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