PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique Indium arsenide films have been grown by an electrodeposition process at low temperature on a tin oxide (SnO2) substrate. X-ray diffraction studies showed that the as-grown films are poorly crystallized and heat [...]
PAM XIAMEN offers MoS2 crystal. As a transition metal dichalcogenide, MoS2 is composed of two-dimensional layers stacked in the vertical direction. It possesses some of graphene’s desirable qualities (such as mechanical strength and electrical conductivity), and can emit light, opening possible applications such as [...]
R-Plane Sapphire Substrate with SSP PAM-XIAMEN offers R-Plane（1-102） Sapphire Substrate, single side polished,please see below spec: 2”,R-Plane Sapphire Substrate with SSP No Item Specification 1 Material High Purity Al2O3 2 Diameter 50.8土0.1mm 3 Orientation R-plane<1-102>土0.2° 4 Thickness 430土15um 5 TTV ≤15um 6 Bow ≤10um 7 Warp ≤15um 8 Primary Flat Length 16.0土1.0mm 9 Front suface Roughmess(Ra) Ra≤0.3nm 10 Bock Surtace Roughness(Ra) 0.8~1.2um 11 Primary Flat Orienation A-plane+0.2° 12 Surtace onentation R-Plane土0.2° 13 Laser Mark back side or front side or no laser mark 14 Package 25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom 3”,R-Plane Sapphire Substrate with SSP No ltem Specification 1 Material High [...]
X-ray response of polycrystalline – CdZnTe X-ray response of polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon [...]
A Plane U-GaN Freestanding GaN Substrate PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-U Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
A fracture criterion for gallium arsenide wafers The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the [...]
