Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible?
A:Yes, it is no problem, some clients bought our wafers for LLO.
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible?
A:Yes, it is no problem, some clients bought our wafers for LLO.
Q: What is the highest temperature and the highest thermal shock that the wafers can withstand? A: At the temperatures higher than 1000 C on the free surface of Si-face of 6H-SiC (0001) the carbon segregation properties are started so that during short time the thin [...]
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare [...]
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q:For pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flipchip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. A:LED light is sourcing from mqw light, emitting in all directions, p-GaN is [...]
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
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