Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q: What is the highest temperature and the highest thermal shock that the wafers can withstand? A: At the temperatures higher than...
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it...
Q:As to the wafer dicing - is it possible to get a non-rectangular dicing? such as 6mm x 8mm size? A:No...
Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6"Ø×650±25µm, VGF SI undoped...
Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n...
Q:In your web site, the picture of the SiC wafer does not look like regular, transparent-light green color SiC wafer. Why is...