Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?

A:Considering edge dislocation and mixing dislocation and then abtained by XRD

2018-06-19

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.

2018-06-19meta-author

Q:The ideal waverlength for us is 465 nm, can you offer?.

Q:The ideal waverlength for us is 465 nm, can you offer?. A:It is no problem, but you should know the wavelength should be a range, what we will offer you 465+/-2nm.

2018-06-19meta-author

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.

2018-06-19meta-author

Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure?

Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure? A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]

2018-06-19meta-author

Q: Is it possible to use 4” non-patterned sapphire for fabrication?

Q: Is it possible to use 4” non-patterned sapphire for fabrication? A:Not possible, currently all the manufacturers swift to patterned sapphire based wafer, including us, however if you really need flat sapphire based wafer, we we can offer 2″ size.

2018-06-19meta-author

Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves?

Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]

2018-06-19meta-author

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PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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PAM-XIAMEN Offers photoresist plate with photoresist
Read More

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PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?

Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?

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Related Posts

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q:The ideal waverlength for us is 465 nm, can you offer?.

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure?

Q: Is it possible to use 4” non-patterned sapphire for fabrication?

Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves?

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers