Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Leading manufacturer of compound semiconductor material in China
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]
Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A:Sorry, we can not offer fabrication of p and n [...]
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size? A:No problem, any size is workable.
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier [...]